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MMDT5451-7-F

Diodes Incorporated

MMDT5451-7-F by Diodes Incorporated

MMDT5451-7-F by Diodes Inc. is a small signal BJT transistor with NPN and PNP polarity. It has a max collector-emitter voltage of 160V, making it suitable for switching applications. With a min DC current gain of 30 and a nominal transition frequency of 100MHz, it offers reliable performance in various electronic circuits.

Median Price

$0.085

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 233 parts In-Stock

1+ parts

$0.430

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$0.167

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$0.111

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233

$0.430

$0.167

$0.111

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Mouser Electronics

USA . 351 parts In-Stock

1+ parts

$0.490

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$0.185

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$0.129

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$0.099

351

$0.490

$0.185

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$0.099

Verical

USA . 18,000 parts In-Stock

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$0.052

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$0.052

Future Electronics

Canada . 9,000 parts In-Stock

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$0.063

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$0.063

Arrow

USA . 5,800 parts In-Stock

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$0.030

5,800

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Element14

Singapore . 5,204 parts In-Stock

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$0.142

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$0.089

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$0.080

5,204

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$0.142

$0.089

$0.080

Farnell

UK . 5,064 parts In-Stock

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$0.085

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$0.050

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$0.045

5,064

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$0.085

$0.050

$0.045

Avnet

USA . 3,000 parts In-Stock

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Distributors (In-Stock)

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Greenchips

USA . 360 parts In-Stock

1+ parts

$0.066

100+ parts

$0.063

1k+ parts

$0.060

10k+ parts

$0.054

360

$0.066

$0.063

$0.060

$0.054

Nova Conductors

Japan . 10 parts In-Stock

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$0.085

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10

$0.085

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TME

Poland . 119 parts In-Stock

1+ parts

$0.340

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$0.137

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$0.080

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$0.059

119

$0.340

$0.137

$0.080

$0.059

Vyrian

USA . 139,200 parts In-Stock

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Connect4Technologies Inc.

Canada . 64,954 parts In-Stock

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IBS Electronics

USA . 54,000 parts In-Stock

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$0.056

54,000

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$0.056

Chip Stock

USA . 43,117 parts In-Stock

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Component Sense

UK . 35,674 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15,000 parts In-Stock

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ComSIT USA

USA . 15,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,408 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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Velocity Electronics

USA . 1,684 parts In-Stock

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1,684

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Prism Electronics

USA . 630 parts In-Stock

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630

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SPM Sales

USA . 381 parts In-Stock

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381

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SIE Connect GmbH - GreenChips

Germany . 360 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 307 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 103,273 parts In-Stock

1+ parts

$0.035

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$0.034

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$0.034

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103,273

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$0.034

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Ampacity Inc.

Singapore . 139,034 parts In-Stock

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$0.037

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139,034

$0.037

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Argo Parts USA

USA . 4,313 parts In-Stock

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$0.075

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$0.073

4,313

$0.075

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$0.073

Netroflash

USA . 100 parts In-Stock

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$0.085

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100

$0.085

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Modulus Dynamics

Lithuania . 17,025 parts In-Stock

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$0.761

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$0.761

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$0.761

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17,025

$0.761

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Corohmni

South Africa . 4 parts In-Stock

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$1.413

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4

$1.413

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Aztec Data Supply Inc.

USA . 4,866 parts In-Stock

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$1.950

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Kepictronics

USA . 100,000 parts In-Stock

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Perfect Parts

USA . 99,500 parts In-Stock

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Infinite Electronics LLP (Excess)

. 78,006 parts In-Stock

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78,006

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GreenTree Electronics

Israel . 63,000 parts In-Stock

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Eastek

USA . 42,000 parts In-Stock

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Glotronic Ltd.

UK . 24,000 parts In-Stock

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Lixinc

USA . 13,018 parts In-Stock

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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iodParts Technologies Inc.

India . 2,660 parts In-Stock

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2,660

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Component Stockers USA

USA . 2,604 parts In-Stock

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$0.040

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$0.040

2,604

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$0.040

$0.040

Continental Prestige Electronics

USA . 1,715 parts In-Stock

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$0.139

1k+ parts

$0.069

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$0.046

1,715

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$0.139

$0.069

$0.046

Futuretech Components

Singapore . 958 parts In-Stock

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958

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Overview

Experience superior quality and performance with the MMDT5451-7-F by Diodes Incorporated. This small signal bipolar junction transistor offers unmatched value and benefits to our customers. With its NPN and PNP polarity, separate configuration, and switching application, this transistor is perfect for a wide range of applications. Whether you need to enhance your electronic devices or optimize your circuit designs, trust the MMDT5451-7-F to deliver outstanding results. Choose Diodes Incorporated for reliable components that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP types allows for flexibility in circuit design and enhances compatibility with different systems.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration of two elements allows for independent use or combination, providing versatility in circuit design and amplification applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high speed and efficient switching performance.

Surface Mount: YES

Being surface mount compatible enables easy PCB integration and saves valuable space in compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package enhances stability and ease of mounting, making it suitable for automated assembly processes.

Terminal Form: GULL WING

The gull-wing terminal form facilitates secure and reliable soldering, ensuring optimal electrical connections.

No. of Elements: 2

With two elements in a single package, this transistor provides convenience and simplifies circuit design.

No. of Terminals: 6

The availability of six terminals allows for versatile connectivity options, enabling optimal layout and customization.

Maximum Power Dissipation (Abs): 0.2 W

The low power dissipation capability ensures efficient operation and helps to prevent overheating in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it suitable for space-constrained applications without compromising performance.

Minimum DC Current Gain (hFE): 30

With a minimum gain of 30, this transistor offers reliable amplification of input signals, ensuring accurate and consistent output.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature provides stability and reliability, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 160 V

With a high voltage rating of 160 V, this transistor can handle a wide range of voltage levels, enhancing its versatility.

Transistor Element Material: SILICON

Silicon, being a widely used semiconductor material, ensures high performance, stability, and durability for various applications.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current flows, making it suitable for many low to medium power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures reliable and corrosion-resistant solder joints, improving the longevity and performance of the transistor.

Terminal Position: DUAL

The dual terminal positions provide flexibility in circuit integration and enable easy connection to other components or PCB traces.

Moisture Sensitivity Level (MSL): 1

The MSL 1 rating denotes a low moisture sensitivity level, ensuring safe and reliable storage and handling of the transistor during manufacturing and shipping.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and preventing damage during assembly processes.

Peak Reflow Temperature °C: 260

The ability to withstand a peak reflow temperature of 260°C demonstrates the transistor's high-temperature resistance and ensures its reliability during soldering.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency of 100 MHz, this transistor offers excellent high-frequency performance, making it suitable for applications requiring fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT5451-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMDT5451-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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