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MMDT3904VC-7

Diodes Incorporated

MMDT3904VC-7 by Diodes Incorporated

MMDT3904VC-7 by Diodes Inc. is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 300MHz. With a small outline package and surface mount capability, it offers efficient performance in compact electronic designs.

Median Price

$0.111

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 240,000 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.064

240,000

-

-

-

$0.064

Verical

USA . 240,000 parts In-Stock

1+ parts

-

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$0.064

240,000

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$0.064

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.079

3,000

-

-

-

$0.079

Farnell

UK . 2,985 parts In-Stock

1+ parts

-

100+ parts

$0.143

1k+ parts

$0.094

10k+ parts

$0.082

2,985

-

$0.143

$0.094

$0.082

Element14

Singapore . 2,985 parts In-Stock

1+ parts

-

100+ parts

$0.144

1k+ parts

$0.097

10k+ parts

$0.086

2,985

-

$0.144

$0.097

$0.086

Newark

USA . 2,495 parts In-Stock

1+ parts

-

100+ parts

$0.205

1k+ parts

$0.137

10k+ parts

-

2,495

-

$0.205

$0.137

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.112

100+ parts

-

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10

$0.112

-

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Bristol Electronics

USA . 1,286 parts In-Stock

1+ parts

$0.394

100+ parts

$0.197

1k+ parts

$0.079

10k+ parts

-

1,286

$0.394

$0.197

$0.079

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Vyrian

USA . 98,550 parts In-Stock

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98,550

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Chip Stock

USA . 47,000 parts In-Stock

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47,000

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IBS Electronics

USA . 9,000 parts In-Stock

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$0.111

9,000

-

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$0.111

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.147

6,000

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$0.147

Cyclops Electronics Ltd

UK . 5,998 parts In-Stock

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5,998

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ACDS - Activité Composants Distribution Service

France . 1,286 parts In-Stock

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1,286

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Dan-Mar Components

USA . 1,286 parts In-Stock

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1,286

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Prism Electronics

USA . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 98,691 parts In-Stock

1+ parts

$0.056

100+ parts

-

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10k+ parts

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98,691

$0.056

-

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Semicontronic

India . 98,603 parts In-Stock

1+ parts

$0.056

100+ parts

$0.055

1k+ parts

$0.054

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-

98,603

$0.056

$0.055

$0.054

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.110

100+ parts

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1k+ parts

$0.105

10k+ parts

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2,000

$0.110

-

$0.105

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Modulus Dynamics

Lithuania . 14,712 parts In-Stock

1+ parts

$0.112

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$0.112

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$0.112

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-

14,712

$0.112

$0.112

$0.112

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Corohmni

South Africa . 10 parts In-Stock

1+ parts

$0.112

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10

$0.112

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Argo Parts USA

USA . 2,857 parts In-Stock

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$0.112

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$0.109

2,857

$0.112

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$0.109

Aztec Data Supply Inc.

USA . 311 parts In-Stock

1+ parts

$1.355

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311

$1.355

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Eastek

USA . 45,000 parts In-Stock

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Perfect Parts

USA . 33,425 parts In-Stock

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Lixinc

USA . 12,204 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,990 parts In-Stock

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$0.172

1k+ parts

$0.091

10k+ parts

$0.068

2,990

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$0.172

$0.091

$0.068

iodParts Technologies Inc.

India . 2,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,000 parts In-Stock

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2,000

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Glotronic Ltd.

UK . 1,600 parts In-Stock

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1,600

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GreenTree Electronics

Israel . 363 parts In-Stock

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363

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Overview

Unlock the power of efficient switching with the MMDT3904VC-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality in small signal bipolar junction transistors. This NPN transistor offers a myriad of applications in various electronic devices. With its high performance and reliability, this product provides exceptional value and benefits to customers looking for superior functionality in their designs. Choose the MMDT3904VC-7 for unparalleled performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a lightweight and durable package for the transistor, making it ideal for applications where weight and durability are important.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications, making this transistor suitable for a wide range of switching tasks.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration with 2 elements allows for more flexible circuit design and can improve overall performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and low power consumption.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and space in electronic devices.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can handle high temperature environments without sacrificing performance.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating of 40V provides a safety margin for applications where voltage spikes may occur.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency of 300MHz enables this transistor to handle high-frequency switching signals with ease, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT3904VC-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MMDT3904VC-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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