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MMDT4413-7-F

Diodes Incorporated

MMDT4413-7-F by Diodes Incorporated

MMDT4413-7-F by Diodes Inc. is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max collector-emitter voltage of 40V, it offers a transition frequency of 250MHz and operates at up to 150°C.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,609 parts In-Stock

1+ parts

$0.464

100+ parts

$0.167

1k+ parts

$0.071

10k+ parts

-

2,609

$0.464

$0.167

$0.071

-

DigiKey

USA . 43 parts In-Stock

1+ parts

$0.480

100+ parts

$0.185

1k+ parts

$0.124

10k+ parts

-

43

$0.480

$0.185

$0.124

-

Mouser Electronics

USA . 35,760 parts In-Stock

1+ parts

$0.680

100+ parts

$0.302

1k+ parts

$0.186

10k+ parts

-

35,760

$0.680

$0.302

$0.186

-

Farnell

UK . 7,710 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.058

10k+ parts

$0.055

7,710

-

-

$0.058

$0.055

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

3,000

-

-

-

$0.057

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

3,000

-

-

-

$0.057

Element14

Singapore . 2,869 parts In-Stock

1+ parts

-

100+ parts

$0.254

1k+ parts

$0.103

10k+ parts

$0.099

2,869

-

$0.254

$0.103

$0.099

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

-

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50

$0.110

-

-

-

IBS Electronics

USA . 924,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

924,000

-

-

-

$0.050

NAC Semi

USA . 492,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.082

492,000

-

-

-

$0.082

Vyrian

USA . 203,705 parts In-Stock

1+ parts

-

100+ parts

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203,705

-

-

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Chip Stock

USA . 72,500 parts In-Stock

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72,500

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-

-

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Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

-

-

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ComSIT Distribution GmbH

Germany . 941 parts In-Stock

1+ parts

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941

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Prism Electronics

USA . 44 parts In-Stock

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44

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Distributors (Availability)

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Ampacity Inc.

Singapore . 203,493 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

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203,493

$0.038

-

-

-

Argo Parts USA

USA . 376 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

-

10k+ parts

$0.107

376

$0.110

-

-

$0.107

Continental Prestige Electronics

USA . 9,380 parts In-Stock

1+ parts

$0.418

100+ parts

$0.172

1k+ parts

$0.091

10k+ parts

$0.068

9,380

$0.418

$0.172

$0.091

$0.068

RC Electronics

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.140

10k+ parts

$0.140

70,000

-

$0.150

$0.140

$0.140

Authorized Procurement Solutions

USA . 22,000 parts In-Stock

1+ parts

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22,000

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Perfect Parts

USA . 12,025 parts In-Stock

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12,025

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Lixinc

USA . 11,586 parts In-Stock

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11,586

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Kepictronics

USA . 7,000 parts In-Stock

1+ parts

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7,000

-

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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3,000

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-

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Assy Fe

Spain . 3,000 parts In-Stock

1+ parts

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3,000

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.108

1k+ parts

$0.105

10k+ parts

$0.102

500

-

$0.108

$0.105

$0.102

Overview

Enhance your electronic devices with the MMDT4413-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. This Small Signal Bipolar Junction Transistor is perfect for switching applications, offering customers exceptional performance and efficiency. With its NPN and PNP configuration and high DC current gain, this transistor provides superior functionality. Upgrade your circuits with the MMDT4413-7-F and experience the benefits of advanced technology at an affordable price.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the transistor, making it suitable for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast switching speeds and high efficiency.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments, ensuring reliability and performance under challenging conditions.

Maximum Collector-Emitter Voltage: 40 V

Can handle relatively high voltage levels, suitable for a wide range of electronic circuits.

Minimum DC Current Gain (hFE): 40

Provides stable amplification and ensures consistent performance in various circuit configurations.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate current levels, making it versatile for different circuit designs.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for efficient signal processing and high-speed operation, ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT4413-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

255 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMDT4413-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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