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MMDT2227M-7

Diodes Incorporated

MMDT2227M-7 by Diodes Incorporated

MMDT2227M-7 by Diodes Incorporated is a small signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max collector-emitter voltage of 40V, it offers fast turn-on/off times of 35ns/285ns and operates at up to 150°C, making it suitable for high-speed circuits requiring low power dissipation.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 10 parts In-Stock

1+ parts

$0.105

100+ parts

$0.105

1k+ parts

$0.105

10k+ parts

-

10

$0.105

$0.105

$0.105

-

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.067

3,000

-

-

-

$0.067

Farnell

UK . 2,700 parts In-Stock

1+ parts

-

100+ parts

$0.135

1k+ parts

$0.077

10k+ parts

$0.069

2,700

-

$0.135

$0.077

$0.069

Element14

Singapore . 2,700 parts In-Stock

1+ parts

-

100+ parts

$0.128

1k+ parts

$0.080

10k+ parts

-

2,700

-

$0.128

$0.080

-

Verical

USA . 1,329 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.110

10k+ parts

-

1,329

-

-

$0.110

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

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150

$0.103

-

-

-

Chip Stock

USA . 114,528 parts In-Stock

1+ parts

-

100+ parts

-

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114,528

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-

-

-

Vyrian

USA . 3,023 parts In-Stock

1+ parts

-

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3,023

-

-

-

-

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

3,000

-

-

-

$0.092

Bristol Electronics

USA . 871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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871

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,701 parts In-Stock

1+ parts

$0.054

100+ parts

$0.053

1k+ parts

$0.052

10k+ parts

-

3,701

$0.054

$0.053

$0.052

-

Ampacity Inc.

Singapore . 3,018 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

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3,018

$0.054

-

-

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Argo Parts USA

USA . 4,227 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

4,227

$0.103

-

-

$0.100

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

$0.098

10k+ parts

$0.096

2,000

$0.103

-

$0.098

$0.096

Corohmni

South Africa . 65 parts In-Stock

1+ parts

$0.103

100+ parts

-

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-

10k+ parts

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65

$0.103

-

-

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.105

100+ parts

$0.105

1k+ parts

$0.105

10k+ parts

-

10

$0.105

$0.105

$0.105

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Component Stockers USA

USA . 25,975 parts In-Stock

1+ parts

$0.420

100+ parts

$0.130

1k+ parts

$0.070

10k+ parts

$0.050

25,975

$0.420

$0.130

$0.070

$0.050

Aztec Data Supply Inc.

USA . 2,204 parts In-Stock

1+ parts

$1.856

100+ parts

-

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2,204

$1.856

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Perfect Parts

USA . 58,808 parts In-Stock

1+ parts

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100+ parts

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58,808

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Lixinc

USA . 19,460 parts In-Stock

1+ parts

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19,460

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iodParts Technologies Inc.

India . 5,010 parts In-Stock

1+ parts

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100+ parts

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5,010

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

$0.079

10k+ parts

$0.055

3,000

-

$0.156

$0.079

$0.055

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

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Overview

Enhance your electronic projects with the MMDT2227M-7 from Diodes Incorporated, a leading manufacturer known for quality and reliability. This small signal BJT transistor offers NPN and PNP configurations for switching applications, making it versatile for various projects. With a maximum collector-emitter voltage of 40V and a transition frequency of 300MHz, this transistor delivers high performance in a compact package. Trust in Diodes Incorporated to provide top-notch components that bring value and efficiency to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring longevity and affordability.

Polarity or Channel Type: NPN AND PNP

Versatile design allowing for both NPN and PNP configurations, suitable for a variety of circuits.

Configuration: SEPARATE, 2 ELEMENTS

Separate elements offer flexibility in circuit design and allow for precise control.

Transistor Application: SWITCHING

Ideal for switching applications due to fast turn on/off times and high collector current capability.

Surface Mount: YES

Compact surface mount design saves space and enhances PCB layout efficiency.

No. of Elements: 2

Dual elements provide increased functionality and options in circuit design.

Maximum Power Dissipation (Abs): 0.3 W

Efficient power handling capability for reliable performance in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range suitable for diverse environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

High voltage rating for safe and reliable operation in different voltage circuits.

Nominal Transition Frequency (fT): 300 MHz

High frequency response allowing for fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT2227M-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMDT2227M-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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