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MMDT2222A-7-F

Diodes Incorporated

MMDT2222A-7-F by Diodes Incorporated

Diodes Inc.'s MMDT2222A-7-F is a NPN BJT with 2 elements, 0.6A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its compact SOT package and high transition frequency. Offers fast switching times (ton: 35ns, toff: 285ns) and operates up to 150°C.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 354,000 parts In-Stock

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-

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$0.039

354,000

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$0.039

Arrow

USA . 3,000 parts In-Stock

1+ parts

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$0.040

3,000

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$0.040

Distributors (In-Stock)

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Nova Conductors

Japan . 34 parts In-Stock

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$0.101

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34

$0.101

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Chip Stock

USA . 66,500 parts In-Stock

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66,500

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NAC Semi

USA . 18,000 parts In-Stock

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$0.053

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$0.053

Vyrian

USA . 11,993 parts In-Stock

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11,993

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Inventory MP

USA . 4,473 parts In-Stock

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4,473

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Bristol Electronics

USA . 3,923 parts In-Stock

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3,923

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Semtec, LLC

USA . 2,740 parts In-Stock

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2,740

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Florida Circuit

USA . 2,539 parts In-Stock

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2,539

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Prism Electronics

USA . 2,216 parts In-Stock

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2,216

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Flex Direct, LLC

USA . 450 parts In-Stock

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450

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Connector Distribution Corp

USA . 450 parts In-Stock

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450

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Right Parts Inc.

USA . 450 parts In-Stock

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450

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Distributors (Availability)

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Ampacity Inc.

Singapore . 132,055 parts In-Stock

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$0.033

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$0.033

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Semicontronic

India . 107,897 parts In-Stock

1+ parts

$0.033

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$0.032

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$0.032

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107,897

$0.033

$0.032

$0.032

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Argo Parts USA

USA . 1,063 parts In-Stock

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$0.101

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$0.098

1,063

$0.101

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$0.098

Continental Prestige Electronics

USA . 791 parts In-Stock

1+ parts

$0.101

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$0.099

791

$0.101

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$0.099

Corohmni

South Africa . 210 parts In-Stock

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$0.598

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210

$0.598

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Aztec Data Supply Inc.

USA . 772 parts In-Stock

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$1.740

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772

$1.740

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Perfect Parts

USA . 90,962 parts In-Stock

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90,962

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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Lixinc

USA . 5,099 parts In-Stock

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5,099

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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1,740

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Netroflash

USA . 100 parts In-Stock

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$0.099

1k+ parts

$0.096

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$0.094

100

-

$0.099

$0.096

$0.094

Overview

Enhance your electronic designs with the MMDT2222A-7-F by Diodes Incorporated, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that delivers exceptional performance and reliability. Manufactured with precision and expertise, this NPN transistor offers seamless integration in a variety of applications, from amplifiers to switching circuits. With its high-quality construction and advanced features, this transistor ensures optimal functionality and efficiency. Elevate your projects with the MMDT2222A-7-F and experience unparalleled value and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor, making it versatile for various electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of the two elements, providing flexibility in circuit design.

Surface Mount: YES

Easy to mount on circuit boards, saving space and making assembly more efficient.

Package Shape: RECTANGULAR

Easier to handle and mount compared to irregular shapes.

Terminal Form: GULL WING

Provides secure soldering connection for stable performance.

No. of Elements: 2

Suitable for applications requiring multiple elements in a single package.

No. of Terminals: 6

Provides multiple connection points for flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.2 W

Can handle higher power levels without damage, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Compact size allows for densely populated circuits and space-saving designs.

Minimum DC Current Gain (hFE): 40

Ensures sufficient amplification capabilities for various applications.

Maximum Operating Temperature: 150 °C

Can withstand higher temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Offers good performance and reliability in electronic circuits.

Maximum Turn On Time (ton): 35 ns

Provides fast switching speeds for responsive circuit operation.

Maximum Collector Current (IC): 0.6 A

Can handle higher current levels, suitable for various applications.

Maximum Turn Off Time (toff): 285 ns

Ensures minimal switching losses and efficient operation.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Allows for multiple connection options for versatility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper reflow soldering without damaging the transistor.

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering and high-temperature reflow processes.

Nominal Transition Frequency (fT): 300 MHz

Provides high-frequency operation for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT2222A-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMDT2222A-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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