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MMDT2907A-7-F

Diodes Incorporated

MMDT2907A-7-F by Diodes Incorporated

Diodes Inc. MMDT2907A-7-F is a PNP BJT with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 60V, max. collector current of 0.6A, and min. DC current gain of 50 (hFE). Package: Small Outline, Surface Mount with Gull Wing terminals.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 108,000 parts In-Stock

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$0.075

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$0.075

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Mouser Electronics

USA . 236 parts In-Stock

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$0.490

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$0.183

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$0.119

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236

$0.490

$0.183

$0.119

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Farnell

UK . 3,145 parts In-Stock

1+ parts

-

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$0.134

1k+ parts

$0.065

10k+ parts

$0.058

3,145

-

$0.134

$0.065

$0.058

Element14

Singapore . 3,145 parts In-Stock

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-

100+ parts

$0.130

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$0.066

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$0.060

3,145

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$0.130

$0.066

$0.060

Verical

USA . 3,000 parts In-Stock

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$0.064

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$0.064

Arrow

USA . 41 parts In-Stock

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$0.048

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41

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$0.048

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Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

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$0.122

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15

$0.122

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NAC Semi

USA . 375,000 parts In-Stock

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$0.058

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$0.058

Vyrian

USA . 167,778 parts In-Stock

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Chip Stock

USA . 71,800 parts In-Stock

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Rutronik

Germany . 12,000 parts In-Stock

1+ parts

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$0.067

12,000

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$0.067

Electronics Depot

USA . 5,160 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Lantek

USA . 2,903 parts In-Stock

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Prism Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Ampacity Inc.

Singapore . 179,357 parts In-Stock

1+ parts

$0.032

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179,357

$0.032

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Semicontronic

India . 174,267 parts In-Stock

1+ parts

$0.034

100+ parts

$0.033

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$0.033

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174,267

$0.034

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$0.033

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Argo Parts USA

USA . 1,488 parts In-Stock

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$0.117

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$0.113

1,488

$0.117

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$0.113

Netroflash

USA . 50 parts In-Stock

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$0.122

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$0.120

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50

$0.122

$0.120

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Corohmni

South Africa . 171 parts In-Stock

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$0.136

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171

$0.136

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Continental Prestige Electronics

USA . 3,630 parts In-Stock

1+ parts

$0.331

100+ parts

$0.092

1k+ parts

$0.070

10k+ parts

$0.047

3,630

$0.331

$0.092

$0.070

$0.047

Aztec Data Supply Inc.

USA . 2,713 parts In-Stock

1+ parts

$0.910

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2,713

$0.910

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Andel Nordic

Denmark . 4,203 parts In-Stock

1+ parts

$1.088

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$1.044

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$1.044

4,203

$1.088

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$1.044

$1.044

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.987

100+ parts

$1.808

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$1.629

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2,000

$1.987

$1.808

$1.629

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Legend Electronics Inc. (Excess)

USA . 182,915 parts In-Stock

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RC Electronics

USA . 95,779 parts In-Stock

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$0.160

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$0.140

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Perfect Parts

USA . 56,324 parts In-Stock

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Lixinc

USA . 12,114 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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Futuretech Components

Singapore . 958 parts In-Stock

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958

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Overview

Unleash the power of innovation with the MMDT2907A-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability in their Small Signal Bipolar Junction Transistors (BJT). This PNP transistor features a compact design with 2 separate elements, making it ideal for switching applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 50, this transistor offers unmatched performance and efficiency. Elevate your projects to new heights with the MMDT2907A-7-F and experience the difference that Diodes Incorporated brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can complement existing NPN transistors in certain circuits.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for flexibility in circuit design and can enhance the efficiency of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast turn-on and turn-off times for efficient operation.

Surface Mount: YES

Surface mount capability makes this transistor easy to assemble on PCBs, saving space and reducing overall manufacturing costs.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation rating, this transistor can operate efficiently without overheating.

Maximum Collector-Emitter Voltage: 60 V

This voltage rating allows the transistor to handle higher voltages and can be used in a variety of voltage levels.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency enables the transistor to switch at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT2907A-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

MMDT2907A-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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