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FFB2907A

Onsemi

FFB2907A by Onsemi

FFB2907A by Onsemi is a PNP BJT transistor with 2 elements, ideal for switching applications. It has a max operating temp of 150 °C, collector-emitter voltage of 60V, and transition frequency of 250MHz. This small outline package features gull wing terminals and matte tin finish for surface mount assembly.

Median Price

$0.125

Lifecycle Status

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18

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1k+

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Arrow

USA . 705 parts In-Stock

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$0.316

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$0.123

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705

$0.316

$0.123

$0.100

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DigiKey

USA . 20,406 parts In-Stock

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$0.080

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Flip Electronics (Authorized)

USA . 20,406 parts In-Stock

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Chip1Stop

Japan . 1,721 parts In-Stock

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$0.122

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$0.093

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$0.085

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Verical

USA . 1,721 parts In-Stock

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$0.219

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$0.140

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$0.099

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$0.099

Rochester

USA . 897 parts In-Stock

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$0.125

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$0.104

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$0.092

897

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$0.092

Distributors (In-Stock)

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Vyrian

USA . 2,615 parts In-Stock

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$0.138

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$0.138

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Digiode

USA . 2,293 parts In-Stock

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$0.438

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Chip Stock

USA . 126,500 parts In-Stock

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Bristol Electronics

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Inventory MP

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Lantek

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NAC Semi

USA . 6,000 parts In-Stock

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$0.137

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R&J Components

USA . 5,995 parts In-Stock

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North Shore Components

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Speed Components Ltd

Israel . 2,855 parts In-Stock

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Prism Electronics

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Corohmni

South Africa . 295 parts In-Stock

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295

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Corphita

USA . 1,725 parts In-Stock

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$0.415

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RC Electronics

USA . 93,569 parts In-Stock

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$0.140

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$0.130

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$0.130

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Perfect Parts

USA . 54,647 parts In-Stock

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Metaverse IC Inc.

Canada . 39,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Kepictronics

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Kulean Microsystems

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iodParts Technologies Inc.

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GreenTree Electronics

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A-Z Elektronik GmbH

Germany . 5,546 parts In-Stock

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Alle Elektronik GmbH

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TANS Electronics

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Supply Digital

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SupplyDigital Components

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UHIMA Technologies

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Northwest PG Solutions

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Overview

Discover the power of the FFB2907A by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for efficient switching applications. With a maximum operating temperature of 150 °C and a peak reflow temperature of 260°C, this PNP transistor offers reliability and durability like no other. Its compact rectangular package with gull wing terminals makes it perfect for surface mount applications, providing seamless integration into your projects. Trust in Onsemi's expertise and innovation to deliver outstanding performance with the FFB2907A. Experience the benefits of this versatile component and unlock endless possibilities in your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for various switching tasks.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexible circuit design and can enhance overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to integrate this transistor onto a printed circuit board, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can handle a wide range of operating conditions without compromising performance.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FFB2907A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

80 ns

Maximum Turn On Time (ton):

30 ns

Trade Compliance

FFB2907A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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