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FFB2222A

Onsemi

FFB2222A by Onsemi

The Onsemi FFB2222A is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a max collector-emitter voltage of 40V, max current of 0.5A, and transition frequency of 300MHz. With Gull Wing terminals and small outline package, it offers efficient performance in compact designs.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Arrow

USA . 93 parts In-Stock

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$0.091

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$0.052

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Digiode

USA . 1,563 parts In-Stock

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$0.086

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Chip Stock

USA . 43,698 parts In-Stock

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Lantek

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North Shore Components

USA . 5,817 parts In-Stock

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Vyrian

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R&J Components

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Bristol Electronics

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Mil-Aero Solutions, Inc.

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Connector Distribution Corp

USA . 608 parts In-Stock

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Right Parts Inc.

USA . 608 parts In-Stock

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Cyclops Electronics Ltd

UK . 17 parts In-Stock

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Corphita

USA . 1,847 parts In-Stock

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$0.082

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Corohmni

South Africa . 435 parts In-Stock

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$0.091

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435

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Native Components

USA . 326 parts In-Stock

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$0.092

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$0.088

326

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$0.088

Northwest PG Solutions

USA . 290 parts In-Stock

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$0.101

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$0.089

290

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$0.089

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 5,783 parts In-Stock

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TANS Electronics

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Problanco Electronics

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Assy Fe

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Supply Digital

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A-Z Elektronik GmbH

Germany . 1,733 parts In-Stock

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SupplyDigital Components

Austria . 1,290 parts In-Stock

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Alle Elektronik GmbH

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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Microchip USA

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Overview

Discover the FFB2222A by Onsemi, a top-tier Small Signal Bipolar Junction Transistor designed for SWITCHING applications. With its high-quality construction and NPN configuration, this transistor offers unmatched performance and reliability. Whether you're looking to optimize power dissipation or enhance switching efficiency, this product is your ultimate solution. Trust Onsemi's expertise in semiconductor technology to deliver superior results. Upgrade your systems with the FFB2222A and experience a whole new level of precision and control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications and offer good amplification capabilities, making them versatile for various circuit designs.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power dissipation levels, suitable for switching applications where power handling is important.

Maximum Collector-Emitter Voltage: 40 V

Can withstand relatively high voltage levels, making it suitable for applications that require switching high voltage signals.

Maximum Turn On Time (ton): 28 ns

Fast turn on time allows for quick response in switching operations, improving overall performance of the transistor in high-speed applications.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency enables the transistor to operate effectively at high frequencies, making it suitable for RF applications and high-speed switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FFB2222A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

220 ns

Maximum Turn On Time (ton):

28 ns

Trade Compliance

FFB2222A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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