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NST3904DXV6T5

Onsemi

NST3904DXV6T5 by Onsemi

The Onsemi NST3904DXV6T5 is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150 °C. This small outline transistor offers a max collector-emitter voltage of 40V and transition frequency of 300MHz.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,541 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

3,541

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 121 parts In-Stock

1+ parts

$0.041

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-

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121

$0.041

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Chip Stock

USA . 312,500 parts In-Stock

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312,500

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Vyrian

USA . 6,102 parts In-Stock

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6,102

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Distributors (Availability)

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Corphita

USA . 1,410 parts In-Stock

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$0.039

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-

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1,410

$0.039

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Corohmni

South Africa . 61 parts In-Stock

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$0.043

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61

$0.043

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AZTECH Wire

Italy . 388 parts In-Stock

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$13.120

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388

$13.120

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SupplyDigital Components

Austria . 6,396 parts In-Stock

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6,396

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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TANS Electronics

Latvia . 2,498 parts In-Stock

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2,498

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A-Z Elektronik GmbH

Germany . 2,100 parts In-Stock

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2,100

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Problanco Electronics

Mexico . 1,886 parts In-Stock

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Kulean Microsystems

USA . 1,450 parts In-Stock

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1,450

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UHIMA Technologies

Türkiye . 462 parts In-Stock

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462

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RC Electronics

USA . 200 parts In-Stock

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200

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Overview

Upgrade your electronics with the NST3904DXV6T5 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality small signal bipolar junction transistors that are perfect for amplifier applications. With a compact package shape and high reliability, this NPN transistor offers a maximum collector-emitter voltage of 40V and a nominal transition frequency of 300MHz. Experience enhanced performance and efficiency with this innovative product that guarantees superior results in your electronic projects. Elevate your designs with the NST3904DXV6T5 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type of BJT, NPN transistors are versatile and widely available for different circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring reliable performance in signal amplification applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for industrial and commercial applications that require heat resistance.

Maximum Collector-Emitter Voltage: 40 V

Offers a high collector-emitter voltage rating, allowing for use in circuits that require higher voltage handling capabilities.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency ensures fast switching speeds, ideal for high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3904DXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3904DXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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