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NST30010MXV6T1G

Onsemi

NST30010MXV6T1G by Onsemi

NST30010MXV6T1G by Onsemi is a PNP BJT with 2 elements, hFE of 420, and max fT of 100 MHz. Ideal for amplifier applications, it has a max VCE of 30V and operates up to 150°C. This small outline transistor in plastic/epoxy package is surface mountable with dual terminals.

Median Price

$0.141

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,845 parts In-Stock

1+ parts

$0.101

100+ parts

$0.056

1k+ parts

$0.042

10k+ parts

-

1,845

$0.101

$0.056

$0.042

-

DigiKey

USA . 13 parts In-Stock

1+ parts

$0.660

100+ parts

$0.262

1k+ parts

$0.178

10k+ parts

$0.160

13

$0.660

$0.262

$0.178

$0.160

Flip Electronics (Authorized)

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

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36,000

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-

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Chip1Stop

Japan . 3,750 parts In-Stock

1+ parts

-

100+ parts

$0.265

1k+ parts

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3,750

-

$0.265

-

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Verical

USA . 1,845 parts In-Stock

1+ parts

-

100+ parts

-

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$0.042

10k+ parts

-

1,845

-

-

$0.042

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Rochester

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$0.141

1k+ parts

$0.117

10k+ parts

$0.105

200

-

$0.141

$0.117

$0.105

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,097 parts In-Stock

1+ parts

$0.024

100+ parts

-

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2,097

$0.024

-

-

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Nova Conductors

Japan . 63 parts In-Stock

1+ parts

$0.336

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63

$0.336

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Chip Stock

USA . 58,000 parts In-Stock

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58,000

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Flip Electronics

USA . 36,000 parts In-Stock

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36,000

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Vyrian

USA . 9,447 parts In-Stock

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9,447

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SPM Sales

USA . 2,223 parts In-Stock

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2,223

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Electronic Treasures

USA . 2,000 parts In-Stock

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2,000

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Prism Electronics

USA . 25 parts In-Stock

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25

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Distributors (Availability)

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Semicontronic

India . 9,242 parts In-Stock

1+ parts

$0.021

100+ parts

$0.020

1k+ parts

$0.020

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9,242

$0.021

$0.020

$0.020

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Ampacity Inc.

Singapore . 9,163 parts In-Stock

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$0.021

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9,163

$0.021

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Corphita

USA . 1,699 parts In-Stock

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$0.022

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1,699

$0.022

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Corohmni

South Africa . 390 parts In-Stock

1+ parts

$0.025

100+ parts

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390

$0.025

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Argo Parts USA

USA . 1,967 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

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10k+ parts

$0.326

1,967

$0.336

-

-

$0.326

Continental Prestige Electronics

USA . 916 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

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10k+ parts

$0.329

916

$0.336

-

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$0.329

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.336

100+ parts

$0.329

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-

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100

$0.336

$0.329

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Aztec Data Supply Inc.

USA . 2,449 parts In-Stock

1+ parts

$1.950

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2,449

$1.950

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RC Electronics

USA . 61,860 parts In-Stock

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$0.340

1k+ parts

$0.310

10k+ parts

$0.300

61,860

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$0.340

$0.310

$0.300

Kepictronics

USA . 60,000 parts In-Stock

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60,000

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Perfect Parts

USA . 22,427 parts In-Stock

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Lixinc

USA . 13,627 parts In-Stock

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Futuretech Components

Singapore . 8,000 parts In-Stock

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Kulean Microsystems

USA . 6,724 parts In-Stock

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6,724

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TANS Electronics

Latvia . 5,156 parts In-Stock

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5,156

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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SupplyDigital Components

Austria . 1,197 parts In-Stock

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1,197

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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552

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Problanco Electronics

Mexico . 398 parts In-Stock

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398

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Enhance your electronic devices with the NST30010MXV6T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Crafted with precision and expertise by Onsemi, this PNP transistor boasts a myriad of applications, including amplification tasks. With its compact design and advanced features, this transistor offers customers unmatched value and performance. Upgrade your projects today with the NST30010MXV6T1G and experience the benefits of superior quality and reliability that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Using plastic/epoxy as the package body material makes this product lightweight and durable, ideal for portable devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits that require a positive-negative-positive transistor arrangement.

Configuration: SEPARATE, 2 ELEMENTS

The separate, 2 element configuration provides flexibility in circuit design and allows for better customization of amplifier circuits.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor delivers reliable performance and excellent signal amplification.

Surface Mount: YES

Being surface mountable, this transistor is easy to install and saves space on the PCB, making it suitable for compact designs.

Package Shape: RECTANGULAR

The rectangular package shape ensures easy placement on the PCB and efficient use of board space.

Terminal Form: FLAT

The flat terminal form simplifies soldering and ensures a secure connection, enhancing the overall reliability of the transistor.

No. of Elements: 2

With 2 elements, this transistor can handle dual-channel amplification, making it versatile for various circuit configurations.

No. of Terminals: 6

The 6 terminals provide multiple connection points, enabling more complex circuit designs and improved functionality.

Maximum Power Dissipation (Abs): 0.661 W

With a high maximum power dissipation, this transistor can handle heavy load conditions without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving benefits and allows for easy integration into tight spaces.

Minimum DC Current Gain (hFE): 420

A minimum DC current gain of 420 ensures reliable and consistent amplification performance in a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating makes this transistor suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high efficiency, low noise, and reliable performance in various operating conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for low to medium power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish improves solderability and ensures a reliable electrical connection in demanding operating environments.

Terminal Position: DUAL

The dual terminal position offers increased flexibility in circuit design and allows for easy connection to external components.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper soldering and prevents thermal damage during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures robust solder joints and reliability in harsh operating environments.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor is capable of operating at high frequencies, making it suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST30010MXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NST30010MXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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