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NST3906F3T5G

Onsemi

NST3906F3T5G by Onsemi

The Onsemi NST3906F3T5G is a PNP BJT transistor with 40V VCEO, 0.2A IC, and 250MHz fT. Ideal for amplifier applications, it comes in a small outline package with matte tin finish and operates up to 150 °C.

Median Price

$0.116

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 976 parts In-Stock

1+ parts

$0.308

100+ parts

$0.116

1k+ parts

$0.076

10k+ parts

$0.052

976

$0.308

$0.116

$0.076

$0.052

Newark

USA . 1,605 parts In-Stock

1+ parts

$0.314

100+ parts

$0.128

1k+ parts

$0.088

10k+ parts

-

1,605

$0.314

$0.128

$0.088

-

Mouser Electronics

USA . 911 parts In-Stock

1+ parts

$0.390

100+ parts

$0.170

1k+ parts

$0.094

10k+ parts

$0.070

911

$0.390

$0.170

$0.094

$0.070

Farnell

UK . 9,900 parts In-Stock

1+ parts

-

100+ parts

-

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$0.058

10k+ parts

$0.057

9,900

-

-

$0.058

$0.057

Element14

Singapore . 9,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.098

10k+ parts

$0.067

9,900

-

-

$0.098

$0.067

EBV Elektronik

Germany . 8,000 parts In-Stock

1+ parts

-

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8,000

-

-

-

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Chip1Stop

Japan . 1,191 parts In-Stock

1+ parts

-

100+ parts

$0.081

1k+ parts

$0.064

10k+ parts

-

1,191

-

$0.081

$0.064

-

Verical

USA . 976 parts In-Stock

1+ parts

-

100+ parts

$0.116

1k+ parts

$0.076

10k+ parts

$0.052

976

-

$0.116

$0.076

$0.052

Rochester

USA . 501 parts In-Stock

1+ parts

-

100+ parts

$0.050

1k+ parts

$0.042

10k+ parts

$0.037

501

-

$0.050

$0.042

$0.037

DigiKey

USA . 501 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.600

10k+ parts

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501

-

-

$0.600

-

Distributors (In-Stock)

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Digiode

USA . 2,415 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

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2,415

$0.039

-

-

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Vyrian

USA . 1,193 parts In-Stock

1+ parts

$0.040

100+ parts

-

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1,193

$0.040

-

-

-

Chip Stock

USA . 75,000 parts In-Stock

1+ parts

-

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75,000

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NAC Semi

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

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$0.088

32,000

-

-

-

$0.088

Flip Electronics

USA . 8,000 parts In-Stock

1+ parts

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8,000

-

-

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QIE Inc.

USA . 7,820 parts In-Stock

1+ parts

-

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7,820

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-

-

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Contempo Components LLC

USA . 45 parts In-Stock

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45

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Distributors (Availability)

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Corphita

USA . 1,522 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

-

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1,522

$0.037

-

-

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Corohmni

South Africa . 394 parts In-Stock

1+ parts

$0.040

100+ parts

-

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394

$0.040

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Perfect Parts

USA . 68,945 parts In-Stock

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68,945

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Eastek

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.060

10k+ parts

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24,000

-

-

$0.060

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Continental Prestige Electronics

USA . 20,935 parts In-Stock

1+ parts

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100+ parts

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$0.049

10k+ parts

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20,935

-

-

$0.049

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QUARKTWIN TECHNOLOGY LTD

USA . 18,025 parts In-Stock

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18,025

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Kulean Microsystems

USA . 7,783 parts In-Stock

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7,783

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SupplyDigital Components

Austria . 6,400 parts In-Stock

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6,400

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TANS Electronics

Latvia . 4,500 parts In-Stock

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4,500

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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2,400

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Problanco Electronics

Mexico . 2,377 parts In-Stock

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2,377

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 862 parts In-Stock

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862

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Authorized Procurement Solutions

USA . 820 parts In-Stock

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820

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Overview

Enhance your electronic designs with the NST3906F3T5G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplifier applications. Manufactured by industry leader Onsemi, this PNP transistor offers exceptional performance and reliability, making it a must-have component for your projects. With its compact package design and high power dissipation capabilities, this transistor provides value and versatility to meet your specific needs. Trust Onsemi's expertise and elevate your creations with the NST3906F3T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers high durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are often used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into a variety of electronic devices.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 0.347 W

Can handle moderate power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 30

Provides sufficient gain for amplification purposes, enhancing the overall performance of the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, allowing for use in demanding thermal environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring higher voltage handling capabilities, enhancing versatility.

Nominal Transition Frequency (fT): 250 MHz

Offers high frequency response, making it ideal for applications where fast switching speeds are required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3906F3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3906F3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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