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NST3946DXV6T1G

Onsemi

NST3946DXV6T1G by Onsemi

NST3946DXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 separate elements. It has a max power dissipation of 0.5W, operating temp of 150°C, and max collector-emitter voltage of 40V. Ideal for amplifier applications due to its small outline package style and silicon transistor element material.

Median Price

$0.075

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 27,870 parts In-Stock

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Chip1Stop

Japan . 12,000 parts In-Stock

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$0.070

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Arrow

USA . 4,000 parts In-Stock

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Verical

USA . 4,000 parts In-Stock

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Vyrian

USA . 1,711 parts In-Stock

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Digiode

USA . 1,270 parts In-Stock

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Cyclops Electronics Ltd

UK . 192,000 parts In-Stock

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Chip Stock

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NAC Semi

USA . 32,000 parts In-Stock

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$0.137

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Flip Electronics

USA . 27,870 parts In-Stock

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IBS Electronics

USA . 4,000 parts In-Stock

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$0.134

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Velocity Electronics

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EPE Components Inc.

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Bristol Electronics

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Corohmni

South Africa . 381 parts In-Stock

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Corphita

USA . 1,060 parts In-Stock

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iodParts Technologies Inc.

India . 200,000 parts In-Stock

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RC Electronics

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Perfect Parts

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GreenTree Electronics

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Lixinc

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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A-Z Elektronik GmbH

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Overview

Upgrade your electronic devices with the NST3946DXV6T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that guarantees top performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor offers seamless amplification for various applications. With its NPN and PNP configuration, flat terminal form, and small outline package style, this transistor is perfect for surface mount designs. Experience unparalleled efficiency and power with a maximum collector-emitter voltage of 40V and a nominal transition frequency of 300MHz. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and resistance to external elements, making the transistor suitable for various environments.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile application in different circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, the transistor can handle moderate power levels efficiently.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150°C ensures the transistor can withstand high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage of 40V allows the transistor to be used in a wide range of applications.

Nominal Transition Frequency (fT): 300 MHz

With a high nominal transition frequency of 300 MHz, the transistor is suitable for high-frequency applications such as amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3946DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3946DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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