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NST3906DP6T5G

Onsemi

NST3906DP6T5G by Onsemi

The Onsemi NST3906DP6T5G is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and power dissipation of 0.42W. With a transition frequency of 250MHz, it offers fast switching times for efficient performance.

Median Price

$0.057

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 38,987 parts In-Stock

1+ parts

$0.340

100+ parts

$0.129

1k+ parts

$0.095

10k+ parts

$0.068

38,987

$0.340

$0.129

$0.095

$0.068

Chip1Stop

Japan . 81 parts In-Stock

1+ parts

$1.120

100+ parts

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81

$1.120

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Rochester

USA . 169,750 parts In-Stock

1+ parts

-

100+ parts

$0.054

1k+ parts

$0.045

10k+ parts

$0.040

169,750

-

$0.054

$0.045

$0.040

Verical

USA . 169,750 parts In-Stock

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-

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$0.050

169,750

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$0.050

Avnet

USA . 48,000 parts In-Stock

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48,000

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Flip Electronics (Authorized)

USA . 31,590 parts In-Stock

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31,590

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DigiKey

USA . 853 parts In-Stock

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$0.057

853

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$0.057

Distributors (In-Stock)

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Digiode

USA . 400 parts In-Stock

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$0.061

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400

$0.061

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Vyrian

USA . 1,136 parts In-Stock

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$0.062

100+ parts

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1,136

$0.062

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Bristol Electronics

USA . 7,694 parts In-Stock

1+ parts

$0.211

100+ parts

$0.106

1k+ parts

$0.042

10k+ parts

$0.026

7,694

$0.211

$0.106

$0.042

$0.026

Chip Stock

USA . 51,000 parts In-Stock

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Flip Electronics

USA . 31,590 parts In-Stock

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31,590

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NAC Semi

USA . 16,000 parts In-Stock

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$0.101

16,000

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$0.101

ACDS - Activité Composants Distribution Service

France . 7,694 parts In-Stock

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7,694

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Dan-Mar Components

USA . 7,694 parts In-Stock

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First Choice Components Inc.

USA . 900 parts In-Stock

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900

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 853 parts In-Stock

1+ parts

$0.058

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853

$0.058

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Corohmni

South Africa . 449 parts In-Stock

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$0.062

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449

$0.062

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Perfect Parts

USA . 59,320 parts In-Stock

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59,320

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Kepictronics

USA . 13,750 parts In-Stock

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13,750

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SupplyDigital Components

Austria . 8,063 parts In-Stock

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Problanco Electronics

Mexico . 7,602 parts In-Stock

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Kulean Microsystems

USA . 7,299 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,650 parts In-Stock

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TANS Electronics

Latvia . 1,067 parts In-Stock

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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Authorized Procurement Solutions

USA . 140 parts In-Stock

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GreenTree Electronics

Israel . 131 parts In-Stock

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Overview

Looking for a reliable and high-quality solution for your amplifier applications? Look no further than the NST3906DP6T5G by Onsemi. With a strong reputation for manufacturing excellence, Onsemi delivers a top-notch Small Signal Bipolar Junction Transistor that guarantees excellent performance and reliability. Whether you're working on audio equipment or signal processing systems, this PNP transistor with separate 2 elements configuration is sure to meet all your needs. Trust Onsemi for unparalleled value and benefits, and take your projects to the next level with the NST3906DP6T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides good insulation and protection for the transistor, making it more durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate, 2 elements allows for more flexibility and versatility in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Surface mount capability makes installation easier and allows for compact circuit designs.

Maximum Power Dissipation (Abs): 0.42 W

With a maximum power dissipation of 0.42W, this transistor can handle moderate power levels efficiently.

Maximum Operating Temperature: 150 °C

Can operate reliably in high-temperature environments up to 150 °C.

Maximum Collector-Emitter Voltage: 40 V

With a maximum collector-emitter voltage of 40V, it can handle high voltage applications with ease.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for high-speed switching and amplification capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3906DP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3906DP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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