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NST3946DXV6T5G

Onsemi

NST3946DXV6T5G by Onsemi

NST3946DXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 elements in a rectangular package with 6 terminals, capable of handling up to 0.2A collector current at 40V max voltage. With a transition frequency of 300MHz and compact design, it offers high performance in a small outline package.

Median Price

$0.101

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 7,775 parts In-Stock

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7,775

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Rochester

USA . 62 parts In-Stock

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-

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$0.101

1k+ parts

$0.083

10k+ parts

$0.074

62

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$0.101

$0.083

$0.074

Distributors (In-Stock)

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Digiode

USA . 769 parts In-Stock

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$0.072

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769

$0.072

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Vyrian

USA . 1,393 parts In-Stock

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$0.076

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1,393

$0.076

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Chip Stock

USA . 74,000 parts In-Stock

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74,000

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Flip Electronics

USA . 71,775 parts In-Stock

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71,775

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Distributors (Availability)

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Corphita

USA . 2,124 parts In-Stock

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$0.068

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2,124

$0.068

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Corohmni

South Africa . 301 parts In-Stock

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$0.076

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301

$0.076

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Perfect Parts

USA . 17,613 parts In-Stock

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17,613

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SupplyDigital Components

Austria . 7,312 parts In-Stock

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7,312

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TANS Electronics

Latvia . 5,321 parts In-Stock

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Kulean Microsystems

USA . 4,153 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Problanco Electronics

Mexico . 1,279 parts In-Stock

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UHIMA Technologies

Türkiye . 475 parts In-Stock

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475

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Overview

Unlock the power of quality with the NST3946DXV6T5G by Onsemi. As a leading manufacturer in the industry of Small Signal Bipolar Junction Transistors, Onsemi delivers top-notch performance and reliability. Ideal for amplifier applications, this transistor boasts NPN and PNP configurations, maximizing versatility. With a compact small outline package style and high transition frequency of 300 MHz, customers can expect exceptional value and performance. Say goodbye to compromise and hello to excellence with the NST3946DXV6T5G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the transistor from external elements, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile use in different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration of 2 elements provides flexibility in circuit design and implementation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring efficient signal amplification.

Surface Mount: YES

Allows for easy and convenient placement on circuit boards during manufacturing.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels without overheating, making it reliable in operation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to moderate voltage applications, providing a wide operating range.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, ideal for high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3946DXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3946DXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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