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NST3906DXV6T1

Onsemi

NST3906DXV6T1 by Onsemi

NST3906DXV6T1 by Onsemi is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 40V, max power dissipation of 0.5W, and min DC current gain of 30. This small outline transistor operates up to 150 °C, with a transition frequency of 250MHz.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 70,675 parts In-Stock

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-

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$0.053

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$0.044

10k+ parts

$0.039

70,675

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$0.053

$0.044

$0.039

Verical

USA . 62,750 parts In-Stock

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$0.049

62,750

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$0.049

Distributors (In-Stock)

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Digiode

USA . 2,234 parts In-Stock

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$0.041

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2,234

$0.041

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Vyrian

USA . 2,229 parts In-Stock

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$0.043

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2,229

$0.043

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Chip Stock

USA . 76,000 parts In-Stock

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Bristol Electronics

USA . 6,600 parts In-Stock

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6,600

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Speed Components Ltd

Israel . 2,900 parts In-Stock

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2,900

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Distributors (Availability)

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Corphita

USA . 2,150 parts In-Stock

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$0.039

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2,150

$0.039

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Component Stockers USA

USA . 74,907 parts In-Stock

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$0.040

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$0.040

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$0.040

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$0.040

74,907

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 254 parts In-Stock

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$0.043

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254

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Continental Prestige Electronics

USA . 91,925 parts In-Stock

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$0.039

91,925

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$0.039

QUARKTWIN TECHNOLOGY LTD

USA . 23,073 parts In-Stock

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SupplyDigital Components

Austria . 6,696 parts In-Stock

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Kulean Microsystems

USA . 4,122 parts In-Stock

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TANS Electronics

Latvia . 4,019 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 1,384 parts In-Stock

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UHIMA Technologies

Türkiye . 56 parts In-Stock

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56

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Overview

Elevate your electronics with the NST3906DXV6T1 by Onsemi, a top-tier manufacturer known for delivering high-quality components. This small signal bipolar junction transistor (BJT) offers exceptional performance as an amplifier, making it ideal for a wide range of applications. With its PNP polarity and separate configuration, this transistor provides reliable and efficient operation. Designed for surface mount installation, this transistor features a compact rectangular package with flat terminals for easy integration. Trust in the superior value and benefits of the NST3906DXV6T1 to enhance the functionality of your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, offering versatility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each transistor element, offering flexibility in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in signal amplification circuits.

Surface Mount: YES

Easily mountable on circuit boards, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for a variety of small signal applications.

Maximum Collector-Emitter Voltage: 40 V

Withstands high voltage levels, making it suitable for applications requiring higher voltage handling capabilities.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3906DXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3906DXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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