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NST3946DP6T5G

Onsemi

NST3946DP6T5G by Onsemi

The Onsemi NST3946DP6T5G is a Small Signal BJT with NPN and PNP polarity, suitable for amplifier applications. It features 2 elements in a rectangular package with 6 terminals, operating at a max temperature of 150 °C. With a transition frequency of 200 MHz and collector-emitter voltage of 40V, it offers high performance in a compact small outline package.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 87 parts In-Stock

1+ parts

$0.294

100+ parts

$0.109

1k+ parts

$0.066

10k+ parts

$0.044

87

$0.294

$0.109

$0.066

$0.044

Mouser Electronics

USA . 51,088 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.067

10k+ parts

$0.052

51,088

$0.300

$0.114

$0.067

$0.052

DigiKey

USA . 7,170 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.074

10k+ parts

$0.054

7,170

$0.300

$0.114

$0.074

$0.054

Rochester

USA . 14,732 parts In-Stock

1+ parts

-

100+ parts

$0.050

1k+ parts

$0.041

10k+ parts

$0.037

14,732

-

$0.050

$0.041

$0.037

Verical

USA . 10,000 parts In-Stock

1+ parts

-

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$0.046

10,000

-

-

-

$0.046

Chip1Stop

Japan . 7,580 parts In-Stock

1+ parts

-

100+ parts

$0.055

1k+ parts

$0.048

10k+ parts

-

7,580

-

$0.055

$0.048

-

Element14

Singapore . 350 parts In-Stock

1+ parts

-

100+ parts

-

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$0.086

10k+ parts

$0.072

350

-

-

$0.086

$0.072

Farnell

UK . 300 parts In-Stock

1+ parts

-

100+ parts

$0.096

1k+ parts

$0.057

10k+ parts

$0.050

300

-

$0.096

$0.057

$0.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,565 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

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1,565

$0.039

-

-

-

Vyrian

USA . 2,299 parts In-Stock

1+ parts

$0.041

100+ parts

-

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2,299

$0.041

-

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Flip Electronics

USA . 120,000 parts In-Stock

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-

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120,000

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A&K Electronics

USA . 8,000 parts In-Stock

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8,000

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Bristol Electronics

USA . 8,000 parts In-Stock

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8,000

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Distributors (Availability)

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Corphita

USA . 1,827 parts In-Stock

1+ parts

$0.037

100+ parts

-

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-

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1,827

$0.037

-

-

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Corohmni

South Africa . 144 parts In-Stock

1+ parts

$0.041

100+ parts

-

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144

$0.041

-

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-

Perfect Parts

USA . 55,306 parts In-Stock

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55,306

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Kepictronics

USA . 14,000 parts In-Stock

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14,000

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Continental Prestige Electronics

USA . 7,340 parts In-Stock

1+ parts

-

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$0.077

1k+ parts

$0.052

10k+ parts

$0.033

7,340

-

$0.077

$0.052

$0.033

GreenTree Electronics

Israel . 5,195 parts In-Stock

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5,195

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Authorized Procurement Solutions

USA . 5,195 parts In-Stock

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5,195

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Problanco Electronics

Mexico . 4,700 parts In-Stock

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4,700

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A-Z Elektronik GmbH

Germany . 2,916 parts In-Stock

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2,916

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SupplyDigital Components

Austria . 2,191 parts In-Stock

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TANS Electronics

Latvia . 1,982 parts In-Stock

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1,982

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Kulean Microsystems

USA . 140 parts In-Stock

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Overview

Enhance your amplifier designs with the NST3946DP6T5G Small Signal Bipolar Junction Transistor by Onsemi. With a focus on quality and reliability, Onsemi delivers a product that exceeds industry standards. Perfect for a wide range of applications, this NPN and PNP transistor offers superior performance and efficiency. Experience the benefits of seamless integration, optimal power dissipation, and high DC current gain. Elevate your projects with Onsemi's innovative technology and unlock endless possibilities in amplifier design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and heat resistance, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Versatile design allows for flexibility in circuit design and implementation.

Configuration: SEPARATE, 2 ELEMENTS

Enables independent control of multiple elements, providing increased functionality in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Simplifies PCB assembly and allows for compact circuit designs, ideal for space-constrained applications.

Maximum Power Dissipation (Abs): 0.42 W

Can handle high power dissipation without overheating, ensuring reliability in operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in a wide range of environments.

Maximum Collector-Emitter Voltage: 40 V

Handles high voltage levels, ensuring safe and stable operation in various circuit configurations.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for high-speed switching in amplifier circuits, improving overall performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3946DP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

325 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3946DP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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