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NST3904DXV6T5G

Onsemi

NST3904DXV6T5G by Onsemi

The Onsemi NST3904DXV6T5G is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. This small outline transistor operates up to 150°C, with peak reflow temp at 260°C and dissipation of 0.5W.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 6,633 parts In-Stock

1+ parts

$1.330

100+ parts

$0.269

1k+ parts

$0.155

10k+ parts

-

6,633

$1.330

$0.269

$0.155

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Farnell

UK . 62,832 parts In-Stock

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$0.080

62,832

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$0.080

Rochester

USA . 54,832 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

54,832

-

$0.079

$0.066

$0.059

EBV Elektronik

Germany . 32,000 parts In-Stock

1+ parts

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32,000

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Verical

USA . 16,000 parts In-Stock

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$0.073

16,000

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$0.073

Flip Electronics (Authorized)

USA . 8,000 parts In-Stock

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8,000

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DigiKey

USA . 6,204 parts In-Stock

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6,204

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Mouser Electronics

USA . 2,115 parts In-Stock

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$0.081

2,115

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$0.081

Distributors (In-Stock)

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Digiode

USA . 307 parts In-Stock

1+ parts

$0.072

100+ parts

-

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307

$0.072

-

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Vyrian

USA . 66 parts In-Stock

1+ parts

$0.076

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66

$0.076

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Chip Stock

USA . 312,500 parts In-Stock

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312,500

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Flip Electronics

USA . 40,000 parts In-Stock

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PC Components Company LLC

USA . 6,836 parts In-Stock

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6,836

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Bristol Electronics

USA . 6,836 parts In-Stock

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6,836

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Distributors (Availability)

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Corphita

USA . 175 parts In-Stock

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$0.068

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175

$0.068

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Corohmni

South Africa . 267 parts In-Stock

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$0.076

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267

$0.076

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Component Stockers USA

USA . 58,758 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

58,758

$0.080

$0.070

$0.070

$0.070

Continental Prestige Electronics

USA . 62,832 parts In-Stock

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$0.063

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62,832

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$0.063

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Perfect Parts

USA . 49,312 parts In-Stock

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Lixinc

USA . 18,622 parts In-Stock

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Kepictronics

USA . 16,000 parts In-Stock

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Authorized Procurement Solutions

USA . 6,633 parts In-Stock

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6,633

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GreenTree Electronics

Israel . 6,633 parts In-Stock

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TANS Electronics

Latvia . 6,228 parts In-Stock

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SupplyDigital Components

Austria . 3,042 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,340 parts In-Stock

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Kulean Microsystems

USA . 1,209 parts In-Stock

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Problanco Electronics

Mexico . 799 parts In-Stock

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UHIMA Technologies

Türkiye . 161 parts In-Stock

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161

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Overview

Enhance your electronic designs with the NST3904DXV6T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers superior performance and reliability for amplifier applications. With a compact design and excellent power dissipation capabilities, this transistor is perfect for a wide range of electronic projects. Experience increased efficiency and precision with the NST3904DXV6T5G, allowing you to take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile for different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration with 2 elements allows for more flexibility in circuit design and enables better control over the transistor's operation.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Surface Mount: YES

Surface mount capability enables easy and efficient assembly onto circuit boards, saving space and reducing overall manufacturing costs.

Maximum Power Dissipation (Abs): 0.5 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring long-term reliability.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications like RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3904DXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3904DXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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