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NST3904MX2T5G

Onsemi

NST3904MX2T5G by Onsemi

The Onsemi NST3904MX2T5G is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact chip carrier package.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14,502 parts In-Stock

1+ parts

$0.290

100+ parts

$0.110

1k+ parts

$0.063

10k+ parts

$0.047

14,502

$0.290

$0.110

$0.063

$0.047

Flip Electronics (Authorized)

USA . 424,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

424,000

-

-

-

-

Rochester

USA . 183,950 parts In-Stock

1+ parts

-

100+ parts

$0.042

1k+ parts

$0.035

10k+ parts

$0.031

183,950

-

$0.042

$0.035

$0.031

Verical

USA . 176,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

176,000

-

-

-

$0.039

DigiKey

USA . 18,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.047

18,638

-

-

-

$0.047

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 838 parts In-Stock

1+ parts

$0.044

100+ parts

-

1k+ parts

-

10k+ parts

-

838

$0.044

-

-

-

Vyrian

USA . 643 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

-

643

$0.046

-

-

-

Flip Electronics

USA . 424,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

424,000

-

-

-

-

Chip Stock

USA . 55,000 parts In-Stock

1+ parts

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55,000

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NAC Semi

USA . 16,000 parts In-Stock

1+ parts

-

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16,000

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IBS Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.047

8,000

-

-

-

$0.047

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 208 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

208

$0.041

-

-

-

Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

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10k+ parts

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280

$0.046

-

-

-

Component Stockers USA

USA . 19,916 parts In-Stock

1+ parts

$0.350

100+ parts

$0.100

1k+ parts

$0.060

10k+ parts

-

19,916

$0.350

$0.100

$0.060

-

Kulean Microsystems

USA . 8,159 parts In-Stock

1+ parts

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8,159

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Problanco Electronics

Mexico . 4,072 parts In-Stock

1+ parts

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4,072

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SupplyDigital Components

Austria . 3,693 parts In-Stock

1+ parts

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3,693

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TANS Electronics

Latvia . 3,173 parts In-Stock

1+ parts

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3,173

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UHIMA Technologies

Türkiye . 987 parts In-Stock

1+ parts

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100+ parts

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987

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Overview

Elevate your electronic projects with the NST3904MX2T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for applications requiring a single configuration with surface mount capabilities. With a maximum VCEsat of 0.3V and a compact rectangular package shape, the NST3904MX2T5G delivers outstanding results while maximizing efficiency. Whether you're designing amplifiers, oscillators, or other small signal circuits, this transistor provides the value and benefits you need to take your projects to the next level. Upgrade your designs today with the Onsemi NST3904MX2T5G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for packaging, ensuring the product's longevity and portability.

Polarity or Channel Type: NPN

Common type of BJT which allows for easy integration into various circuits.

Configuration: SINGLE

Simplifies circuit design by offering a single transistor in the package.

Surface Mount: YES

Enables easy PCB assembly, saving time and effort during manufacturing.

Maximum VCEsat: 0.3 V

Low saturation voltage results in minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Compact form factor for space-efficient installation on PCBs.

Terminal Form: NO LEAD

Lead-free terminals for environmental friendliness and compliance with regulations.

No. of Terminals: 3

Simplified connection setup with fewer terminals to deal with.

Maximum Power Dissipation (Abs): 0.59 W

Can handle moderate power levels without overheating, ensuring reliability.

Package Style (Meter): CHIP CARRIER

Provides a protective housing for the transistor while maintaining a small footprint.

Minimum DC Current Gain (hFE): 30

Consistent and reliable amplification capability for various applications.

Maximum Operating Temperature: 150 °C

Wide temperature range for operation in different environments.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance allows for faster switching speeds and improved performance.

Maximum Collector-Emitter Voltage: 40 V

Supports moderate voltage requirements in circuits without risk of breakdown.

Transistor Element Material: SILICON

Silicon material provides reliable transistor performance and longevity.

Maximum Turn On Time (ton): 70 ns

Quick turn-on time for rapid circuit response and efficiency.

Minimum Operating Temperature: -55 °C

Operational in low-temperature environments for diverse application scenarios.

Maximum Collector Current (IC): 0.2 A

Able to handle moderate current levels, suitable for various circuit requirements.

Maximum Turn Off Time (toff): 260 ns

Quick turn-off time for efficient switching and control in circuits.

Terminal Position: BOTTOM

Allows for easy PCB layout and mounting during assembly.

Case Connection: COLLECTOR

Collector connected case for convenient circuit design and implementation.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency enables high-speed operation in signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3904MX2T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PBCC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

260 ns

Maximum Turn On Time (ton):

70 ns

Maximum VCEsat:

.3 V

Trade Compliance

NST3904MX2T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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