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NST3906DXV6T1G

Onsemi

NST3906DXV6T1G by Onsemi

The Onsemi NST3906DXV6T1G is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 40V, hFE of 30, and operates up to 150°C. This transistor offers a transition frequency of 250MHz and can handle a max collector current of 0.2A.

Median Price

$0.276

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,972 parts In-Stock

1+ parts

$0.470

100+ parts

$0.184

1k+ parts

$0.123

10k+ parts

$0.110

7,972

$0.470

$0.184

$0.123

$0.110

Mouser Electronics

USA . 1,924 parts In-Stock

1+ parts

$0.690

100+ parts

$0.300

1k+ parts

$0.137

10k+ parts

$0.105

1,924

$0.690

$0.300

$0.137

$0.105

Arrow

USA . 8,000 parts In-Stock

1+ parts

-

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$0.081

8,000

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$0.081

Verical

USA . 8,000 parts In-Stock

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$0.081

8,000

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$0.081

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.100

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-

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10

$0.100

-

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Bristol Electronics

USA . 12,735 parts In-Stock

1+ parts

$0.375

100+ parts

$0.188

1k+ parts

$0.075

10k+ parts

$0.047

12,735

$0.375

$0.188

$0.075

$0.047

Digiode

USA . 1,805 parts In-Stock

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$0.418

100+ parts

-

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1,805

$0.418

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R&J Components

USA . 48,000 parts In-Stock

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NAC Semi

USA . 32,000 parts In-Stock

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$0.180

32,000

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$0.180

Chip Stock

USA . 17,000 parts In-Stock

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Microfarads

USA . 12,137 parts In-Stock

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12,137

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Flip Electronics

USA . 8,000 parts In-Stock

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Vyrian

USA . 5,924 parts In-Stock

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5,924

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,888 parts In-Stock

1+ parts

$0.078

100+ parts

-

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5,888

$0.078

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Corohmni

South Africa . 142 parts In-Stock

1+ parts

$0.092

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142

$0.092

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Argo Parts USA

USA . 4,866 parts In-Stock

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$0.100

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$0.097

4,866

$0.100

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$0.097

Continental Prestige Electronics

USA . 4,358 parts In-Stock

1+ parts

$0.100

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$0.098

4,358

$0.100

-

-

$0.098

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.100

100+ parts

-

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$0.095

10k+ parts

$0.093

2,000

$0.100

-

$0.095

$0.093

Corphita

USA . 2,445 parts In-Stock

1+ parts

$0.396

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2,445

$0.396

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Perfect Parts

USA . 718,952 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,921 parts In-Stock

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Metaverse IC Inc.

Canada . 9,000 parts In-Stock

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SupplyDigital Components

Austria . 6,323 parts In-Stock

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Problanco Electronics

Mexico . 5,799 parts In-Stock

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Kulean Microsystems

USA . 4,776 parts In-Stock

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Lixinc

USA . 3,517 parts In-Stock

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TANS Electronics

Latvia . 3,029 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 227 parts In-Stock

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227

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Overview

Experience superior performance and reliability with the NST3906DXV6T1G by Onsemi, a leading manufacturer in the industry. This PNP small signal bipolar junction transistor is ideal for amplifier applications, offering exceptional quality and value to customers. With a maximum collector-emitter voltage of 40V and a transition frequency of 250MHz, this transistor delivers excellent efficiency and power dissipation. Trust Onsemi for top-notch components that exceed expectations and elevate your electronic projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various applications.

Polarity or Channel Type: PNP

Suitable for use in circuits where PNP transistors are required, providing flexibility in design and functionality.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each element, enabling more precise and tailored circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring high performance and efficiency in signal amplification applications.

Surface Mount: YES

Facilitates easy and convenient installation on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Optimal shape for space-saving and efficient placement on circuit boards.

Maximum Power Dissipation (Abs): 0.5 W

Capable of handling higher power levels without overheating, making it suitable for various applications.

Minimum DC Current Gain (hFE): 30

Ensures stable and consistent amplification of signals, providing reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliable performance even in demanding environments.

Maximum Collector-Emitter Voltage: 40 V

Supports high voltage applications, making it versatile for a wide range of circuit designs.

Transistor Element Material: SILICON

Provides high conductivity and reliability, ensuring consistent performance over time.

Nominal Transition Frequency (fT): 250 MHz

High frequency capability allows for faster switching speeds, making it ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3906DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3906DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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