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NST3904DXV6T1G

Onsemi

NST3904DXV6T1G by Onsemi

NST3904DXV6T1G by Onsemi is a NPN BJT with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150°C. With a max fT of 300MHz and VCE of 40V, it offers fast switching times for various electronic designs.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,209 parts In-Stock

1+ parts

$0.238

100+ parts

$0.092

1k+ parts

$0.071

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-

1,209

$0.238

$0.092

$0.071

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DigiKey

USA . 1,062 parts In-Stock

1+ parts

$0.470

100+ parts

$0.184

1k+ parts

$0.123

10k+ parts

$0.110

1,062

$0.470

$0.184

$0.123

$0.110

Mouser Electronics

USA . 404 parts In-Stock

1+ parts

$0.690

100+ parts

$0.300

1k+ parts

$0.185

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404

$0.690

$0.300

$0.185

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Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.088

1k+ parts

$0.073

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$0.065

4,000

-

$0.088

$0.073

$0.065

Master Electronics

USA . 3,200 parts In-Stock

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$0.234

10k+ parts

$0.126

3,200

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$0.234

$0.126

Verical

USA . 3,000 parts In-Stock

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$0.275

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3,000

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$0.275

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Chip1Stop

Japan . 1,744 parts In-Stock

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$0.123

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$0.070

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1,744

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$0.123

$0.070

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Distributors (In-Stock)

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Digiode

USA . 1,754 parts In-Stock

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$0.068

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1,754

$0.068

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Vyrian

USA . 1,891 parts In-Stock

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$0.072

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1,891

$0.072

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Greenchips

USA . 28,000 parts In-Stock

1+ parts

$0.096

100+ parts

$0.092

1k+ parts

$0.087

10k+ parts

$0.079

28,000

$0.096

$0.092

$0.087

$0.079

Maritex

Poland . 1,678 parts In-Stock

1+ parts

$0.163

100+ parts

$0.087

1k+ parts

$0.083

10k+ parts

$0.074

1,678

$0.163

$0.087

$0.083

$0.074

Chip Stock

USA . 314,500 parts In-Stock

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314,500

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Sensible Micro Corp

USA . 24,000 parts In-Stock

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24,000

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Flip Electronics

USA . 16,000 parts In-Stock

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16,000

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IBS Electronics

USA . 11,200 parts In-Stock

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$0.328

10k+ parts

$0.176

11,200

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$0.328

$0.176

NAC Semi

USA . 8,000 parts In-Stock

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$0.182

8,000

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$0.182

Bristol Electronics

USA . 7,365 parts In-Stock

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7,365

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Connector Distribution Corp

USA . 3,975 parts In-Stock

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3,975

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Right Parts Inc.

USA . 3,975 parts In-Stock

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3,975

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Semi Source

USA . 3,455 parts In-Stock

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3,455

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Cyclops Electronics Ltd

UK . 2,195 parts In-Stock

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Prism Electronics

USA . 76 parts In-Stock

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Elcom Components

USA . 55 parts In-Stock

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55

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Speed Components Ltd

Israel . 54 parts In-Stock

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54

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Distributors (Availability)

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Corphita

USA . 266 parts In-Stock

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$0.065

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266

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Corohmni

South Africa . 336 parts In-Stock

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$0.072

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336

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Perfect Parts

USA . 24,759 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,042 parts In-Stock

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Lixinc

USA . 13,761 parts In-Stock

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Kepictronics

USA . 12,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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GreenTree Electronics

Israel . 5,681 parts In-Stock

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5,681

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Kulean Microsystems

USA . 3,773 parts In-Stock

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TANS Electronics

Latvia . 2,439 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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2,400

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S.R.D Solutions

India . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 758 parts In-Stock

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758

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Problanco Electronics

Mexico . 602 parts In-Stock

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UHIMA Technologies

Türkiye . 276 parts In-Stock

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276

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Overview

Unleash the power of innovation with the NST3904DXV6T1G by Onsemi. Crafted with precision and quality, this Small Signal Bipolar Junction Transistor is designed to amplify signals with efficiency and reliability. Whether you're enhancing audio systems or fine-tuning electronic circuits, this NPN transistor delivers unmatched performance. With a maximum collector-emitter voltage of 40V and a nominal transition frequency of 300MHz, this transistor is a game-changer in the world of amplification. Elevate your projects and experience the difference with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and enhances signal amplification capabilities.

Configuration: SEPARATE, 2 ELEMENTS

Separate 2 element design provides flexibility in circuit design and allows for customized applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio and signal processing applications.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving space and reducing production costs.

No. of Terminals: 6

The 6 terminals offer versatility in connectivity options and enable complex circuit designs.

Maximum Power Dissipation (Abs): 0.5 W

High power dissipation capacity allows for reliable operation and minimizes the risk of overheating or damage.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, improving reliability.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating provides a wide range of voltage handling capabilities, suitable for various electronic systems.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency ensures fast switching speeds and high-frequency performance, making it ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3904DXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3904DXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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