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NST3904DP6T5G

Onsemi

NST3904DP6T5G by Onsemi

The Onsemi NST3904DP6T5G is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 200MHz. With a small outline package and surface mount capability, it offers high performance in compact designs.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,265 parts In-Stock

1+ parts

$0.122

100+ parts

$0.045

1k+ parts

$0.025

10k+ parts

$0.018

3,265

$0.122

$0.045

$0.025

$0.018

Mouser Electronics

USA . 16,476 parts In-Stock

1+ parts

$0.300

100+ parts

$0.112

1k+ parts

$0.067

10k+ parts

$0.066

16,476

$0.300

$0.112

$0.067

$0.066

DigiKey

USA . 25,382 parts In-Stock

1+ parts

$0.340

100+ parts

$0.129

1k+ parts

$0.084

10k+ parts

$0.075

25,382

$0.340

$0.129

$0.084

$0.075

Rochester

USA . 703,850 parts In-Stock

1+ parts

-

100+ parts

$0.054

1k+ parts

$0.045

10k+ parts

$0.040

703,850

-

$0.054

$0.045

$0.040

Verical

USA . 696,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

696,000

-

-

-

$0.050

Distributors (In-Stock)

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Vyrian

USA . 988 parts In-Stock

1+ parts

$0.059

100+ parts

-

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-

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-

988

$0.059

-

-

-

Digiode

USA . 1,995 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

-

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-

1,995

$0.061

-

-

-

Chip Stock

USA . 73,000 parts In-Stock

1+ parts

-

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73,000

-

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Cyclops Electronics Ltd

UK . 32,324 parts In-Stock

1+ parts

-

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32,324

-

-

-

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Connect4Technologies Inc.

Canada . 2,850 parts In-Stock

1+ parts

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2,850

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Prism Electronics

USA . 466 parts In-Stock

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466

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,042 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

1,042

$0.058

-

-

-

Corohmni

South Africa . 311 parts In-Stock

1+ parts

$0.059

100+ parts

-

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-

10k+ parts

-

311

$0.059

-

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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90,000

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Perfect Parts

USA . 53,837 parts In-Stock

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53,837

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ChipstoGo Electronic ltd

UK . 32,000 parts In-Stock

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32,000

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Kepictronics

USA . 16,000 parts In-Stock

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16,000

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SupplyDigital Components

Austria . 8,128 parts In-Stock

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8,128

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A-Z Elektronik GmbH

Germany . 5,528 parts In-Stock

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5,528

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TANS Electronics

Latvia . 5,158 parts In-Stock

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5,158

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Problanco Electronics

Mexico . 3,827 parts In-Stock

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3,827

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Lixinc

USA . 3,139 parts In-Stock

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3,139

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Kulean Microsystems

USA . 3,015 parts In-Stock

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3,015

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UHIMA Technologies

Türkiye . 306 parts In-Stock

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306

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Overview

Experience top-notch performance and reliability with the NST3904DP6T5G by Onsemi, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) is perfect for amplifier applications, offering exceptional quality and efficiency. With a maximum power dissipation of 0.42 W and a minimum DC current gain of 30, this NPN transistor provides outstanding performance. Its compact design and surface mount capability make it ideal for various electronic projects. Trust Onsemi's reputation for excellence and choose the NST3904DP6T5G for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having 2 separate elements allows for more flexibility in circuit design and functionality.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Suitable for surface mount technology, making it easy to integrate into electronic assemblies.

Maximum Power Dissipation (Abs): 0.42 W

Can handle a relatively high power dissipation, making it suitable for applications where power output is important.

Maximum Collector-Emitter Voltage: 40 V

Can withstand high collector-emitter voltage, making it suitable for a variety of voltage levels in circuits.

Nominal Transition Frequency (fT): 200 MHz

Offers high transition frequency, making it ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3904DP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

325 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3904DP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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