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NST3906MX2T5G

Onsemi

NST3906MX2T5G by Onsemi

The Onsemi NST3906MX2T5G is a PNP BJT transistor with a max VCEsat of 0.4V and hFE of 30, ideal for small signal applications. With a max collector-emitter voltage of 40V and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits. Packaged in chip carrier style, it is suitable for surface mount designs requiring high transition frequency up to 250MHz.

Median Price

$0.166

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,768 parts In-Stock

1+ parts

$0.290

100+ parts

$0.110

1k+ parts

$0.062

10k+ parts

$0.047

12,768

$0.290

$0.110

$0.062

$0.047

DigiKey

USA . 8,687 parts In-Stock

1+ parts

$0.290

100+ parts

$0.109

1k+ parts

$0.071

10k+ parts

$0.063

8,687

$0.290

$0.109

$0.071

$0.063

Rochester

USA . 768,000 parts In-Stock

1+ parts

-

100+ parts

$0.042

1k+ parts

$0.035

10k+ parts

$0.031

768,000

-

$0.042

$0.035

$0.031

Verical

USA . 768,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

768,000

-

-

-

$0.039

Flip Electronics (Authorized)

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Distributors (In-Stock)

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Digiode

USA . 2,372 parts In-Stock

1+ parts

$0.044

100+ parts

-

1k+ parts

-

10k+ parts

-

2,372

$0.044

-

-

-

Vyrian

USA . 1,048 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

-

1,048

$0.046

-

-

-

Flip Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 701 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

701

$0.041

-

-

-

Corohmni

South Africa . 367 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

-

367

$0.046

-

-

-

Component Stockers USA

USA . 472,639 parts In-Stock

1+ parts

$0.050

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

472,639

$0.050

$0.040

$0.040

$0.040

SupplyDigital Components

Austria . 8,047 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,047

-

-

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TANS Electronics

Latvia . 5,818 parts In-Stock

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5,818

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Problanco Electronics

Mexico . 4,137 parts In-Stock

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4,137

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Kulean Microsystems

USA . 3,088 parts In-Stock

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3,088

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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UHIMA Technologies

Türkiye . 987 parts In-Stock

1+ parts

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987

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Overview

Unleash the power of innovation with the NST3906MX2T5G by Onsemi! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability. Ideal for a variety of applications, this PNP transistor guarantees superior performance in a compact package. With a low VCEsat and high DC current gain, this chip carrier style transistor ensures efficiency and durability. Elevate your projects to new heights with the Onsemi NST3906MX2T5G - where cutting-edge technology meets unbeatable value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, suitable for portable electronic devices.

Polarity or Channel Type: PNP

This PNP configuration allows for complementary pairing with NPN transistors, enabling efficient signal amplification and switching.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in applications.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving space and enhancing manufacturing productivity.

Maximum VCEsat: 0.4 V

The low VCEsat value signifies high efficiency and minimal power loss in operation.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into circuit designs, optimizing space utilization.

Terminal Form: NO LEAD

The no lead terminal form simplifies soldering processes and ensures reliable electrical connections.

Maximum Power Dissipation (Abs): 0.59 W

The high power dissipation capability allows for handling moderate power levels without overheating.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers protection for the transistor die while allowing for efficient thermal management.

Minimum DC Current Gain (hFE): 30

The high minimum DC current gain ensures stable and predictable amplification characteristics.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range enables reliable performance in various environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

The low collector-base capacitance minimizes signal distortion and enhances high-frequency performance.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating ensures safe operation in applications with fluctuating voltage levels.

Transistor Element Material: SILICON

Silicon material provides excellent electrical and thermal properties, contributing to the transistor's overall reliability and performance.

Maximum Turn On Time (ton): 70 ns

The fast turn-on time allows for quick response in switching applications, enhancing overall system efficiency.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature rating ensures reliable performance even in extreme cold conditions.

Maximum Collector Current (IC): 0.2 A

The high maximum collector current rating allows for handling moderate current levels without saturation effects.

Maximum Turn Off Time (toff): 300 ns

The moderate turn-off time ensures smooth switching transitions and reduces the risk of signal distortion.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and ensures easy integration into circuit designs.

Case Connection: COLLECTOR

The case connection at the collector terminal enhances thermal dissipation capabilities and improves overall reliability.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency signifies excellent high-frequency performance, making the transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3906MX2T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PBCC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Maximum VCEsat:

.4 V

Trade Compliance

NST3906MX2T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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