Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi NST3906MX2T5G is a PNP BJT transistor with a max VCEsat of 0.4V and hFE of 30, ideal for small signal applications. With a max collector-emitter voltage of 40V and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits. Packaged in chip carrier style, it is suitable for surface mount designs requiring high transition frequency up to 250MHz.
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100+ parts
$0.110
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$0.062
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$0.047
DigiKey
$0.109
$0.071
$0.063
Rochester
-
$0.042
$0.035
$0.031
Verical
$0.039
Flip Electronics (Authorized)
Digiode
$0.044
Vyrian
$0.046
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Corphita
$0.041
Corohmni
Component Stockers USA
$0.050
$0.040
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TANS Electronics
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Authorized Procurement Solutions
UHIMA Technologies
This material makes the transistor lightweight and durable, suitable for portable electronic devices.
This PNP configuration allows for complementary pairing with NPN transistors, enabling efficient signal amplification and switching.
The single configuration simplifies circuit design and reduces complexity in applications.
The surface mount capability allows for easy and efficient PCB assembly, saving space and enhancing manufacturing productivity.
The low VCEsat value signifies high efficiency and minimal power loss in operation.
The rectangular shape facilitates easy integration into circuit designs, optimizing space utilization.
The no lead terminal form simplifies soldering processes and ensures reliable electrical connections.
The high power dissipation capability allows for handling moderate power levels without overheating.
The chip carrier package style offers protection for the transistor die while allowing for efficient thermal management.
The high minimum DC current gain ensures stable and predictable amplification characteristics.
The high maximum operating temperature range enables reliable performance in various environmental conditions.
The low collector-base capacitance minimizes signal distortion and enhances high-frequency performance.
The high maximum collector-emitter voltage rating ensures safe operation in applications with fluctuating voltage levels.
Silicon material provides excellent electrical and thermal properties, contributing to the transistor's overall reliability and performance.
The fast turn-on time allows for quick response in switching applications, enhancing overall system efficiency.
The low minimum operating temperature rating ensures reliable performance even in extreme cold conditions.
The high maximum collector current rating allows for handling moderate current levels without saturation effects.
The moderate turn-off time ensures smooth switching transitions and reduces the risk of signal distortion.
The bottom terminal position simplifies PCB layout and ensures easy integration into circuit designs.
The case connection at the collector terminal enhances thermal dissipation capabilities and improves overall reliability.
The high nominal transition frequency signifies excellent high-frequency performance, making the transistor suitable for RF applications.
Small Signal Bipolar Junction Transistors (BJT) NST3906MX2T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Element Material:
Nominal Transition Frequency (fT):
Maximum Turn Off Time (toff):
Maximum Turn On Time (ton):
Maximum VCEsat:
NST3906MX2T5G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mold Compound 28/Dec/2021
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
EU2B-YS3203C
Idec
ROTARY SWITCH;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
LM358N
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N2222A
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
1N4148WS
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
NDT2955
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BAV99
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
SS14
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
Rfe International
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
Eic Semiconductor
1N4148
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Surge Components
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
BC817-25
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
BC817-40
Formosa Microsemi
BC817-25,215
NXP Semiconductors
NXP Semiconductors' BC817-25,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 160, it operates at max 150°C with IC of 0.5A. Its small outline package makes it suitable for surface mount designs.
SMMBT4403LT1G
SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.
2N3904TF
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
JANTX2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE; Maximum Turn Off Time (toff): 300 ns;
SBC817-40LT1G
SBC817-40LT1G by Onsemi is a NPN BJT transistor with 250 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.
BC846B
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3055-
Ge Industrial Solutions
Small Signal Bipolar Transistors;
MMBT3906
Lite-on Semiconductor
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
PMBT2222A,215
The NXP Semiconductors PMBT2222A,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, min hFE of 40, and max IC of 0.6A. With a package style of small outline and peak reflow temp of 260C, it operates b/w -65 to 150 °C for various electronic circuits.
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
Kec
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .8 A;
BC858B,215
Nexperia
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;
Philips Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
SMBTA06E6327HTSA1
Infineon Technologies
Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.
2N2905A
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; JEDEC-95 Code: TO-39;
MBT3904DW1T1G
MBT3904DW1T1G by Onsemi is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 300MHz.
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NST3906DXV6T1G
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
NST30010MXV6T1G
NST30010MXV6T1G by Onsemi is a PNP BJT with 2 elements, hFE of 420, and max fT of 100 MHz. Ideal for amplifier applications, it has a max VCE of 30V and operates up to 150°C. This small outline transistor in plastic/epoxy package is surface mountable with dual terminals.
NST3904DP6T5G
The Onsemi NST3904DP6T5G is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 200MHz. With a small outline package and surface mount capability, it offers high performance in compact designs.
NST3904DXV6T1
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
NST3904DXV6T1G
NST3904DXV6T5
NST3904DXV6T5G
NST3904F3T5G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .347 W; Maximum Collector Current (IC): .2 A;
NST3904MX2T5G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .59 W; Maximum Collector Current (IC): .2 A;
NST3906DP6T5G
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .42 W; Maximum Collector Current (IC): .2 A;
NST3906DXV6T1
NST3906DXV6T5
NST3906F3T5G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .347 W; Maximum Collector Current (IC): .2 A;
NST3946DP6T5G
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .42 W; Maximum Collector Current (IC): .2 A;
NST3946DXV6T1
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
NST3946DXV6T1G
NST3946DXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 separate elements. It has a max power dissipation of 0.5W, operating temp of 150°C, and max collector-emitter voltage of 40V. Ideal for amplifier applications due to its small outline package style and silicon transistor element material.
NST3946DXV6T5
NST3946DXV6T5G
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