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NST3904F3T5G

Onsemi

NST3904F3T5G by Onsemi

NST3904F3T5G by Onsemi is a NPN BJT transistor with 40V VCEO, 200MHz fT, and 30 min hFE. Ideal for amplifier applications due to its small outline package style and high transition frequency. Features surface mount capability and operates up to 150°C with a max power dissipation of 0.347W.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,352 parts In-Stock

1+ parts

$0.390

100+ parts

$0.152

1k+ parts

$0.090

10k+ parts

-

12,352

$0.390

$0.152

$0.090

-

DigiKey

USA . 521 parts In-Stock

1+ parts

$0.390

100+ parts

$0.152

1k+ parts

$0.100

10k+ parts

$0.090

521

$0.390

$0.152

$0.100

$0.090

Rochester

USA . 1,083,769 parts In-Stock

1+ parts

-

100+ parts

$0.068

1k+ parts

$0.057

10k+ parts

$0.050

1,083,769

-

$0.068

$0.057

$0.050

Verical

USA . 992,500 parts In-Stock

1+ parts

-

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$0.063

992,500

-

-

-

$0.063

Arrow

USA . 664,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.058

664,000

-

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-

$0.058

Flip Electronics (Authorized)

USA . 3,217 parts In-Stock

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-

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3,217

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Distributors (In-Stock)

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Digiode

USA . 2,341 parts In-Stock

1+ parts

$0.053

100+ parts

-

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2,341

$0.053

-

-

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Vyrian

USA . 2,215 parts In-Stock

1+ parts

$0.056

100+ parts

-

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2,215

$0.056

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Chip Stock

USA . 124,200 parts In-Stock

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124,200

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NAC Semi

USA . 80,000 parts In-Stock

1+ parts

-

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$0.121

80,000

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-

-

$0.121

Bristol Electronics

USA . 7,670 parts In-Stock

1+ parts

-

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7,670

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Atlantic Semiconductor

USA . 7,670 parts In-Stock

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7,670

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Cyclops Electronics Ltd

UK . 6,673 parts In-Stock

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6,673

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ComSIT Distribution GmbH

Germany . 5,213 parts In-Stock

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5,213

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Flip Electronics

USA . 3,217 parts In-Stock

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3,217

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Distributors (Availability)

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Corphita

USA . 647 parts In-Stock

1+ parts

$0.050

100+ parts

-

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647

$0.050

-

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Corohmni

South Africa . 403 parts In-Stock

1+ parts

$0.056

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403

$0.056

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Perfect Parts

USA . 163,468 parts In-Stock

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163,468

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Lixinc

USA . 12,068 parts In-Stock

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12,068

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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Eastek

USA . 8,000 parts In-Stock

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$0.080

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8,000

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$0.080

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Problanco Electronics

Mexico . 7,926 parts In-Stock

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7,926

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SupplyDigital Components

Austria . 5,022 parts In-Stock

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5,022

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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TANS Electronics

Latvia . 1,149 parts In-Stock

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Futuretech Components

Singapore . 522 parts In-Stock

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522

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UHIMA Technologies

Türkiye . 503 parts In-Stock

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503

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Kulean Microsystems

USA . 337 parts In-Stock

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337

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Overview

Upgrade your amplifiers with the high-quality NST3904F3T5G Small Signal Bipolar Junction Transistor (BJT) by Onsemi. Manufactured with precision and expertise, this NPN transistor offers exceptional performance and reliability for your amplifier applications. With its small outline package and flat terminal form, this transistor is perfect for surface mount designs. Experience the benefits of a maximum operating temperature of 150°C, a maximum collector-emitter voltage of 40V, and a nominal transition frequency of 200MHz. Trust Onsemi to deliver top-notch quality and value, making the NST3904F3T5G the ideal choice for your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product ideal for amplifier applications.

Maximum Power Dissipation (Abs): 0.347 W

With a maximum power dissipation of 0.347W, this transistor can handle higher power levels without overheating, increasing its reliability.

Maximum Operating Temperature: 150 °C

The transistor can operate at temperatures up to 150°C, making it suitable for use in various environments.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency of 200 MHz allows for high-speed signal amplification, making this transistor suitable for applications requiring fast switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NST3904F3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

325 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NST3904F3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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