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NSVDTC144TM3T5G

Onsemi

NSVDTC144TM3T5G by Onsemi

NSVDTC144TM3T5G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with matte tin finish is ideal for automotive electronics meeting AEC-Q101 standard.

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Flip Electronics

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Vyrian

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Digiode

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AZTECH Wire

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Kulean Microsystems

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SupplyDigital Components

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Overview

Enhance your electronic designs with the NSVDTC144TM3T5G from Onsemi, a top-tier manufacturer known for its superior quality and reliability. This small signal bipolar junction transistor (BJT) is perfect for switching applications, offering a single configuration with a built-in resistor for added convenience. With a high DC current gain of 120 and a maximum collector-emitter voltage of 50V, this NPN transistor provides exceptional performance in a compact package. Whether you're working on consumer electronics or automotive systems, this transistor delivers the power and efficiency you need to bring your projects to life. Trust Onsemi for cutting-edge technology that elevates your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various electronic applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design and functionality.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Having a built-in resistor simplifies circuit design and saves space on the PCB, making it a convenient choice for applications requiring resistor integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast and efficient switching performance.

Surface Mount: YES

The surface mount feature allows for easy and secure placement on the PCB, enabling automated assembly processes and saving time during production.

Package Shape: RECTANGULAR

The rectangular package shape provides compatibility with standard PCB layouts and facilitates efficient design integration.

Terminal Form: FLAT

The flat terminal form ensures a secure connection and stable placement on the PCB, enhancing overall reliability of the transistor.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, this transistor can effectively handle power loads without risking overheating or performance degradation.

Minimum DC Current Gain (hFE): 120

The minimum DC current gain of 120 ensures consistent and reliable amplification of input signals, making it suitable for various signal processing applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V allows for safe operation in circuits with higher voltage requirements, expanding the transistor's applicability.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making them a popular choice for a wide range of electronic applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1A ensures the transistor can handle high current loads efficiently, making it suitable for various switching and amplification tasks.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides enhanced solderability and corrosion resistance, ensuring a reliable electrical connection and long-term stability.

Terminal Position: DUAL

The dual terminal position allows for flexible and versatile PCB mounting options, accommodating different layout requirements and simplifying installation.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 automotive industry standard guarantees high-quality performance and reliability, making this transistor suitable for automotive and other demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTC144TM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTC144TM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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