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NSVDTA114YM3T5G

Onsemi

NSVDTA114YM3T5G by Onsemi

NSVDTA114YM3T5G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150 °C and peak reflow temp of 260°C. AEC-Q101 compliant, it comes in a small outline package with matte tin finish.

Median Price

$0.173

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,071,400 parts In-Stock

1+ parts

$0.056

100+ parts

$0.032

1k+ parts

-

10k+ parts

-

1,071,400

$0.056

$0.032

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-

Mouser Electronics

USA . 144 parts In-Stock

1+ parts

$0.290

100+ parts

$0.109

1k+ parts

$0.066

10k+ parts

$0.038

144

$0.290

$0.109

$0.066

$0.038

DigiKey

USA . 6,195 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.074

10k+ parts

$0.066

6,195

$0.300

$0.114

$0.074

$0.066

Verical

USA . 1,071,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.032

10k+ parts

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1,071,400

-

-

$0.032

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,395 parts In-Stock

1+ parts

$0.036

100+ parts

-

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1,395

$0.036

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Digiode

USA . 2,358 parts In-Stock

1+ parts

$0.238

100+ parts

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2,358

$0.238

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Chip Stock

USA . 447,114 parts In-Stock

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447,114

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Flip Electronics

USA . 4,616 parts In-Stock

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4,616

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 487 parts In-Stock

1+ parts

$0.036

100+ parts

-

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487

$0.036

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Corphita

USA . 2,241 parts In-Stock

1+ parts

$0.225

100+ parts

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2,241

$0.225

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Component Connect

USA . 62,000 parts In-Stock

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62,000

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TANS Electronics

Latvia . 8,026 parts In-Stock

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8,026

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Kulean Microsystems

USA . 3,639 parts In-Stock

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3,639

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SupplyDigital Components

Austria . 2,225 parts In-Stock

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2,225

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UHIMA Technologies

Türkiye . 776 parts In-Stock

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776

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Problanco Electronics

Mexico . 568 parts In-Stock

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568

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Overview

Enhance your electronic projects with the NSVDTA114YM3T5G by Onsemi, a high-quality PNP small signal transistor with a built-in resistor designed for switching applications. Manufactured by Onsemi, known for their reliable and innovative components, this transistor offers exceptional performance with a low VCEsat of 0.25V and a maximum collector-emitter voltage of 50V. Its compact package style makes it ideal for space-constrained designs, while the matte tin terminal finish ensures durability. Trust Onsemi for superior quality components that deliver value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this transistor ideal for switching purposes.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, saving space and improving efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in switching circuits.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and labor during assembly.

Maximum VCEsat: 0.25 V

Low VCEsat helps reduce power loss and improve efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and compatible with standard PCB layouts, facilitating integration into electronic devices.

Terminal Form: FLAT

Flat terminals provide a secure and stable connection, ensuring reliable performance in various applications.

No. of Terminals: 3

Simple three-terminal configuration for easy installation and connection in circuits.

Maximum Power Dissipation (Abs): 0.6 W

Can handle moderate power dissipation levels, making it suitable for a range of applications.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight design for space-constrained applications.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures amplification and signal switching efficiency.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage switching applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in semiconductor devices.

Minimum Operating Temperature: -55 °C

Wide temperature range for reliable operation in extreme conditions.

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector current levels for various switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and reliable solder joints.

Terminal Position: DUAL

Dual terminal position for flexibility in circuit board layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures safe and efficient soldering process during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature for robust solder joints and reliable connections.

Reference Standard: AEC-Q101

Compliance with automotive industry standards for quality and reliability in automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA114YM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVDTA114YM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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