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NSVDTA144EET1G

Onsemi

NSVDTA144EET1G by Onsemi

NSVDTA144EET1G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and built-in resistor configuration.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 106,850 parts In-Stock

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Flip Electronics (Authorized)

USA . 106,850 parts In-Stock

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Flip Electronics

USA . 106,850 parts In-Stock

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DigiKey Marketplace

USA . 106,850 parts In-Stock

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$0.080

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Vyrian

USA . 106,844 parts In-Stock

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Chip Stock

USA . 43,000 parts In-Stock

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Digiode

USA . 507 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 106,818 parts In-Stock

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$0.068

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Corohmni

South Africa . 224 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,434 parts In-Stock

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Argo Parts USA

USA . 2,723 parts In-Stock

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Kulean Microsystems

USA . 1,950 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,171 parts In-Stock

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Aranea Global

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UHIMA Technologies

Türkiye . 832 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 123 parts In-Stock

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Overview

Discover the NSVDTA144EET1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in switching applications. With its PNP polarity, single configuration with built-in resistor, and low VCEsat of 0.25V, this transistor provides reliable operation and efficiency. Manufactured by Onsemi, known for their superior products, this transistor guarantees durability and precision. Ideal for various electronic projects, the NSVDTA144EET1G is a valuable component that brings convenience and effectiveness to your designs. Elevate your projects with the unbeatable quality and advantages of the NSVDTA144EET1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, making this transistor versatile for a range of circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies design and saves space on the circuit board, making it convenient for compact electronic devices.

Transistor Application: SWITCHING

Specifically designed for switching applications, providing reliable performance in on/off operations.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, enabling efficient manufacturing processes.

Maximum VCEsat: 0.25 V

Low VCE saturation voltage results in minimal power loss and efficient operation of the transistor.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and placement on the PCB, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering during assembly, ensuring reliable connections.

Maximum Power Dissipation (Abs): 0.3 W

High power dissipation capability allows for the transistor to handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the PCB and enables efficient circuit design.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures proper amplification and signal control in the circuit, contributing to reliable performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function in varying environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides flexibility for different voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and reliability, ensuring stable performance over time.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature enables the transistor to function in cold environments without performance degradation.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating allows for handling moderate current levels in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good solderability and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and soldering orientation during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature reduces the risk of thermal damage during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliable soldering and assembly of the transistor onto PCBs.

Reference Standard: AEC-Q101

Compliance with automotive industry standard AEC-Q101 ensures high reliability and quality for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA144EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVDTA144EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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