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NSVDTA115EET1G

Onsemi

NSVDTA115EET1G by Onsemi

NSVDTA115EET1G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and built-in resistor configuration.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,935 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.049

10k+ parts

$0.029

5,935

$0.200

$0.076

$0.049

$0.029

DigiKey

USA . 3,000 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

-

3,000

$0.200

$0.076

$0.048

-

Verical

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

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33,000

-

-

-

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Arrow

USA . 15,000 parts In-Stock

1+ parts

-

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15,000

-

-

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Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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15,000

-

-

-

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Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.034

3,000

-

-

-

$0.034

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,026 parts In-Stock

1+ parts

$0.034

100+ parts

-

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1,026

$0.034

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-

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Digiode

USA . 1,537 parts In-Stock

1+ parts

$0.190

100+ parts

-

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10k+ parts

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1,537

$0.190

-

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Chip Stock

USA . 19,000 parts In-Stock

1+ parts

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19,000

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Flip Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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15,000

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 234 parts In-Stock

1+ parts

$0.034

100+ parts

-

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234

$0.034

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Corphita

USA . 1,040 parts In-Stock

1+ parts

$0.180

100+ parts

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1,040

$0.180

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Perfect Parts

USA . 108,235 parts In-Stock

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108,235

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SupplyDigital Components

Austria . 7,458 parts In-Stock

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7,458

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Kulean Microsystems

USA . 6,559 parts In-Stock

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6,559

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 1,598 parts In-Stock

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1,598

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Problanco Electronics

Mexico . 858 parts In-Stock

1+ parts

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858

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UHIMA Technologies

Türkiye . 307 parts In-Stock

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307

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Overview

Upgrade your electronics with the NSVDTA115EET1G by Onsemi, a high-quality PNP Small Signal Bipolar Junction Transistor with a built-in resistor for seamless switching applications. With a maximum VCEsat of only 0.25V and a minimum DC current gain of 80, this transistor offers superior performance and reliability. Whether you're designing automotive systems or industrial equipment, this Onsemi product delivers efficiency and precision. Trust in the expertise of Onsemi to enhance your projects with cutting-edge technology, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the transistor a reliable and affordable option.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it a convenient choice for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in on/off control circuits.

Surface Mount: YES

Being surface mountable, this transistor is easy to mount on the PCB, saving assembly time and effort.

Maximum VCEsat: 0.25 V

The low saturation voltage helps in reducing power dissipation and improving efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to handle and mount on the PCB, ensuring proper alignment and connection.

Terminal Form: GULL WING

The gull wing terminals provide a secure connection and ease of soldering during PCB assembly.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact electronic designs.

Minimum DC Current Gain (hFE): 80

A higher DC current gain ensures stable and consistent performance in amplification and switching circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its functionality.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows the transistor to handle higher voltages, making it versatile for different applications.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance and reliability, making this transistor a durable choice for electronic circuits.

Minimum Operating Temperature: -55 °C

The wide temperature range from -55°C to 150°C ensures the transistor can operate in harsh environmental conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels in various applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections on the PCB.

Terminal Position: DUAL

The dual terminal position allows for versatility in circuit design and connection options, making the transistor suitable for different configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures proper soldering and reliability during assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without damage.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures the reliability and quality of this transistor for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA115EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVDTA115EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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