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NSVDTC123JM3T5G

Onsemi

NSVDTC123JM3T5G by Onsemi

NSVDTC123JM3T5G by Onsemi is a NPN BJT with built-in resistor, ideal for switching applications. It features hFE of 80, VCE of 50V, and IC of 0.1A. This small outline transistor has a plastic/epoxy body and matte tin finish, suitable for surface mount designs.

Median Price

$0.045

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,880 parts In-Stock

1+ parts

$0.034

100+ parts

$0.032

1k+ parts

$0.030

10k+ parts

$0.030

4,880

$0.034

$0.032

$0.030

$0.030

Mouser Electronics

USA . 6,681 parts In-Stock

1+ parts

$0.320

100+ parts

$0.118

1k+ parts

$0.068

10k+ parts

$0.051

6,681

$0.320

$0.118

$0.068

$0.051

Rochester

USA . 76,030 parts In-Stock

1+ parts

-

100+ parts

$0.046

1k+ parts

$0.038

10k+ parts

$0.034

76,030

-

$0.046

$0.038

$0.034

Verical

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.028

64,000

-

-

-

$0.028

Chip1Stop

Japan . 4,980 parts In-Stock

1+ parts

-

100+ parts

$0.045

1k+ parts

$0.040

10k+ parts

-

4,980

-

$0.045

$0.040

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,470 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

-

10k+ parts

-

2,470

$0.028

-

-

-

Vyrian

USA . 1,655 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

-

1,655

$0.030

-

-

-

Flip Electronics

USA . 136,000 parts In-Stock

1+ parts

-

100+ parts

-

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136,000

-

-

-

-

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

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51,000

-

-

-

-

Cyclops Electronics Ltd

UK . 7,270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,270

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,492 parts In-Stock

1+ parts

$0.027

100+ parts

-

1k+ parts

-

10k+ parts

-

2,492

$0.027

-

-

-

Corohmni

South Africa . 136 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

-

136

$0.030

-

-

-

Continental Prestige Electronics

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.045

10k+ parts

-

80,000

-

-

$0.045

-

TANS Electronics

Latvia . 7,152 parts In-Stock

1+ parts

-

100+ parts

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7,152

-

-

-

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Problanco Electronics

Mexico . 6,297 parts In-Stock

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6,297

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-

-

-

Kulean Microsystems

USA . 2,001 parts In-Stock

1+ parts

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2,001

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-

-

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SupplyDigital Components

Austria . 938 parts In-Stock

1+ parts

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100+ parts

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938

-

-

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UHIMA Technologies

Türkiye . 666 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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666

-

-

-

-

Overview

Looking to enhance your switching applications with a high-quality solution? Look no further than the NSVDTC123JM3T5G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Small Signal Bipolar Junction Transistors (BJT) like no other. With a single configuration and built-in resistor, this NPN transistor is perfect for a wide range of applications. Its compact package design and maximum collector-emitter voltage of 50V make it an ideal choice for your electronic projects. Experience the value and benefits this product offers, and take your designs to the next level with the NSVDTC123JM3T5G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications, making this transistor suitable for such purposes.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor a convenient choice for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and efficient performance when operating as a switch.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on PCBs, saving assembly time and enabling automated manufacturing processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration with other components on a circuit board, enhancing overall design flexibility.

Minimum DC Current Gain (hFE): 80

With a minimum DC current gain of 80, this transistor can amplify small signals effectively, ensuring reliable signal processing.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V allows this transistor to handle higher voltage levels, increasing its versatility in different circuit applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, suitable for various switching and amplification tasks.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a durable and efficient choice for electronic circuits.

Terminal Finish: Matte Tin (Sn) - annealed

The annealed matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in electronic assemblies.

Terminal Position: DUAL

The dual terminal position allows for easy connection in a circuit, facilitating smooth integration and enabling efficient signal flow.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this transistor meets automotive-grade quality and reliability requirements, making it suitable for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTC123JM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTC123JM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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