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NSVDTA114EM3T5G

Onsemi

NSVDTA114EM3T5G by Onsemi

NSVDTA114EM3T5G by Onsemi is a PNP BJT with hFE of 35, VCE of 50V, and IC of 0.1A. Ideal for switching applications due to SINGLE configuration with built-in resistor. AEC-Q101 compliant, it's a surface mount transistor in small outline package suitable for automotive electronics.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,670 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.063

10k+ parts

$0.056

7,670

$0.260

$0.098

$0.063

$0.056

Mouser Electronics

USA . 2,577 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.056

10k+ parts

$0.043

2,577

$0.260

$0.098

$0.056

$0.043

Verical

USA . 104,000 parts In-Stock

1+ parts

-

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$0.028

104,000

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$0.028

Flip Electronics (Authorized)

USA . 63,710 parts In-Stock

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63,710

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Avnet

USA . 24,000 parts In-Stock

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24,000

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Distributors (In-Stock)

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Digiode

USA . 106 parts In-Stock

1+ parts

$0.180

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106

$0.180

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Vyrian

USA . 1,312 parts In-Stock

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$0.190

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1,312

$0.190

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NAC Semi

USA . 88,000 parts In-Stock

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$0.041

88,000

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$0.041

Flip Electronics

USA . 63,710 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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63,710

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,694 parts In-Stock

1+ parts

$0.171

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1,694

$0.171

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Corohmni

South Africa . 322 parts In-Stock

1+ parts

$0.190

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322

$0.190

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Component Stockers USA

USA . 13,801 parts In-Stock

1+ parts

$0.350

100+ parts

$0.100

1k+ parts

$0.060

10k+ parts

-

13,801

$0.350

$0.100

$0.060

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 5,522 parts In-Stock

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5,522

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Problanco Electronics

Mexico . 5,192 parts In-Stock

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5,192

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SupplyDigital Components

Austria . 5,087 parts In-Stock

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5,087

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Kulean Microsystems

USA . 1,725 parts In-Stock

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1,725

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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701

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Overview

Discover the power of the NSVDTA114EM3T5G by Onsemi, a high-quality PNP Small Signal Bipolar Junction Transistor with a built-in resistor for efficient switching applications. Manufactured by Onsemi, this product offers reliability and performance that exceeds industry standards. Ideal for a range of electronic devices, this transistor provides exceptional value and benefits to customers seeking seamless operation and optimal functionality. Upgrade your projects with the NSVDTA114EM3T5G and experience the superior quality and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching circuits, making this product ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

The surface-mount capability allows for easy integration onto circuit boards, saving assembly time and space.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can handle larger voltage levels without breakdown, enhancing its versatility.

Maximum Collector Current (IC): 0.1 A

The transistor can handle a maximum collector current of 0.1A, making it suitable for low to moderate current applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA114EM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTA114EM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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