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NSVDTC123EM3T5G

Onsemi

NSVDTC123EM3T5G by Onsemi

NSVDTC123EM3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has hFE of 8, VCE of 50V, and IC of 0.1A. This small outline transistor in plastic/epoxy package is surface mountable with dual terminals.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,929 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.063

10k+ parts

$0.056

6,929

$0.260

$0.098

$0.063

$0.056

Mouser Electronics

USA . 2,509 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.056

10k+ parts

$0.043

2,509

$0.260

$0.098

$0.056

$0.043

Chip1Stop

Japan . 8,000 parts In-Stock

1+ parts

$2.970

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

$2.970

-

-

-

Rochester

USA . 135,430 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.031

10k+ parts

$0.028

135,430

-

$0.037

$0.031

$0.028

Flip Electronics (Authorized)

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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48,000

-

-

-

-

Verical

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

48,000

-

-

-

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,015 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

10k+ parts

-

2,015

$0.036

-

-

-

Vyrian

USA . 1,646 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

1,646

$0.038

-

-

-

Chip Stock

USA . 52,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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52,000

-

-

-

-

Flip Electronics

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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48,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,831 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

10k+ parts

-

1,831

$0.034

-

-

-

Corohmni

South Africa . 173 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

173

$0.038

-

-

-

RC Electronics

USA . 135,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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135,000

-

-

-

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Kepictronics

USA . 96,000 parts In-Stock

1+ parts

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96,000

-

-

-

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Continental Prestige Electronics

USA . 55,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.045

10k+ parts

-

55,850

-

-

$0.045

-

Perfect Parts

USA . 44,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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44,800

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-

-

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iodParts Technologies Inc.

India . 16,000 parts In-Stock

1+ parts

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100+ parts

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16,000

-

-

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-

Problanco Electronics

Mexico . 8,093 parts In-Stock

1+ parts

-

100+ parts

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8,093

-

-

-

-

TANS Electronics

Latvia . 5,970 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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5,970

-

-

-

-

Kulean Microsystems

USA . 2,840 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,840

-

-

-

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SupplyDigital Components

Austria . 2,379 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,379

-

-

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UHIMA Technologies

Türkiye . 912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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912

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-

-

-

Overview

Enhance your electronic designs with the NSVDTC123EM3T5G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality small signal bipolar junction transistors for various applications, including switching. The NPN configuration and built-in resistor make it a versatile choice for your projects. With a maximum collector-emitter voltage of 50V and a peak reflow temperature of 260 °C, this transistor offers superior performance and reliability. Upgrade your circuits today with the NSVDTC123EM3T5G and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight and durable package for the transistor, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and suitable for a wide range of electronic projects.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, saving space and making it more convenient to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor excels at rapidly and efficiently controlling the flow of current, making it ideal for various switching tasks.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on PCBs, helping streamline the manufacturing process and ensuring a reliable connection in the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor that is easy to handle and integrate into circuit designs.

No. of Terminals: 3

With 3 terminals, this transistor offers the essential connections required for proper operation in a circuit, providing a straightforward and user-friendly interface.

Minimum DC Current Gain (hFE): 8

The minimum DC current gain ensures consistent and reliable amplification performance, making this transistor suitable for a wide range of signal amplification tasks.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for reliable operation in circuits with higher voltage requirements, enhancing the versatility of this transistor.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance and reliability, making this product a durable and effective choice for various electronic applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, making it suitable for a variety of small signal applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides a reliable and durable connection, while the annealing process enhances the solderability and overall quality of the terminal finish.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy connection to external components, enhancing the usability of this transistor.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this transistor meets stringent automotive reliability requirements, making it a reliable choice for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTC123EM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTC123EM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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