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NSVDTA114EET1G

Onsemi

NSVDTA114EET1G by Onsemi

NSVDTA114EET1G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has hFE of 35, VCE of 50V, and IC of 0.1A. This transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.

Median Price

$0.037

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,538 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

3,538

$0.040

-

-

-

DigiKey

USA . 1,175 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

-

1,175

$0.200

$0.076

$0.048

-

Mouser Electronics

USA . 3,703 parts In-Stock

1+ parts

$0.210

100+ parts

$0.076

1k+ parts

$0.049

10k+ parts

$0.038

3,703

$0.210

$0.076

$0.049

$0.038

Flip Electronics (Authorized)

USA . 306,000 parts In-Stock

1+ parts

-

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306,000

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-

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Future Electronics

Canada . 135,000 parts In-Stock

1+ parts

-

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$0.028

135,000

-

-

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$0.028

Newark

USA . 48,000 parts In-Stock

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48,000

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Verical

USA . 3,538 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.025

10k+ parts

-

3,538

-

-

$0.025

-

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.037

3,000

-

-

-

$0.037

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.026

1k+ parts

$0.022

10k+ parts

$0.019

3,000

-

$0.026

$0.022

$0.019

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 163 parts In-Stock

1+ parts

$0.024

100+ parts

-

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163

$0.024

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Vyrian

USA . 2,308 parts In-Stock

1+ parts

$0.025

100+ parts

-

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2,308

$0.025

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Flip Electronics

USA . 278,260 parts In-Stock

1+ parts

-

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278,260

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IBS Electronics

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.042

129,000

-

-

-

$0.042

Chip Stock

USA . 59,000 parts In-Stock

1+ parts

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59,000

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Sensible Micro Corp

USA . 1,638 parts In-Stock

1+ parts

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1,638

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,392 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,392

$0.022

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Corohmni

South Africa . 423 parts In-Stock

1+ parts

$0.025

100+ parts

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423

$0.025

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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40,000

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GreenTree Electronics

Israel . 18,000 parts In-Stock

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18,000

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Problanco Electronics

Mexico . 4,947 parts In-Stock

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4,947

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Perfect Parts

USA . 3,360 parts In-Stock

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3,360

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SupplyDigital Components

Austria . 3,194 parts In-Stock

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3,194

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TANS Electronics

Latvia . 1,450 parts In-Stock

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1,450

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UHIMA Technologies

Türkiye . 458 parts In-Stock

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458

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Kulean Microsystems

USA . 196 parts In-Stock

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196

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Overview

Discover the high-quality NSVDTA114EET1G by Onsemi, a versatile PNP transistor that excels in switching applications. With its single configuration and built-in resistor, this small signal BJT offers seamless integration and reliable performance. Ideal for a wide range of electronic projects, this transistor is perfect for designers looking for efficiency and precision. Trust Onsemi's expertise and innovation to deliver top-notch components that elevate your circuits to the next level. Unlock new possibilities with the NSVDTA114EET1G and experience superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, such as certain types of amplifiers and switching circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by including a built-in resistor, reducing the need for additional components and saving space.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable performance in such scenarios.

Surface Mount: YES

Facilitates easy and secure mounting onto PCBs, making the assembly process more convenient.

No. of Terminals: 3

Streamlines connections in the circuit, making it easier to integrate into existing designs.

Minimum DC Current Gain (hFE): 35

Ensures consistent and reliable amplification of current in the circuit, improving overall performance.

Maximum Collector-Emitter Voltage: 50 V

Allows for operation in circuits with higher voltage requirements, expanding the range of potential applications.

Transistor Element Material: SILICON

Provides stable and predictable performance characteristics, contributing to the overall reliability of the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate levels of current, suitable for a variety of low to medium power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures secure and reliable electrical connections, reducing the risk of signal loss or other issues.

Reference Standard: AEC-Q101

Complies with automotive industry standards, ensuring high quality and reliability for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA114EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTA114EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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