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NSVDTC123JET1G

Onsemi

NSVDTC123JET1G by Onsemi

NSVDTC123JET1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has hFE of 80, VCE of 50V, and IC of 0.1A. The transistor is in a small outline package with gull wing terminals, suitable for surface mount assembly.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,507 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.049

10k+ parts

$0.036

9,507

$0.200

$0.076

$0.049

$0.036

DigiKey

USA . 5,948 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

-

5,948

$0.200

$0.076

$0.048

-

Rochester

USA . 35,979 parts In-Stock

1+ parts

-

100+ parts

$0.026

1k+ parts

$0.022

10k+ parts

$0.019

35,979

-

$0.026

$0.022

$0.019

Verical

USA . 34,453 parts In-Stock

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-

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34,453

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-

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Newark

USA . 33,000 parts In-Stock

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-

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33,000

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Distributors (In-Stock)

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Digiode

USA . 560 parts In-Stock

1+ parts

$0.024

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-

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560

$0.024

-

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Vyrian

USA . 2,455 parts In-Stock

1+ parts

$0.025

100+ parts

-

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2,455

$0.025

-

-

-

Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$0.081

100+ parts

-

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58

$0.081

-

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Flip Electronics

USA . 69,000 parts In-Stock

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-

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69,000

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Distributors (Availability)

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Corphita

USA . 1,561 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,561

$0.022

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Corohmni

South Africa . 469 parts In-Stock

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$0.025

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469

$0.025

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Component Stockers USA

USA . 8,348 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

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8,348

$0.040

$0.040

$0.040

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TANS Electronics

Latvia . 6,712 parts In-Stock

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6,712

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SupplyDigital Components

Austria . 4,123 parts In-Stock

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4,123

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Kulean Microsystems

USA . 2,948 parts In-Stock

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2,948

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Problanco Electronics

Mexico . 2,460 parts In-Stock

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2,460

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UHIMA Technologies

Türkiye . 133 parts In-Stock

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133

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Overview

Enhance your electronic projects with the NSVDTC123JET1G by Onsemi - a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers exceptional performance in switching applications. With a built-in resistor and a maximum collector-emitter voltage of 50V, this transistor is perfect for a wide range of projects. Its compact design and high DC current gain make it ideal for space-constrained applications. Trust Onsemi for reliability and efficiency in your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor ideal for compact designs.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient and reliable operation in electronic circuits.

Surface Mount: YES

Surface mount technology allows for easy installation on PCBs, facilitating mass production and reducing assembly costs.

Package Shape: RECTANGULAR

Rectangular package shape provides a standardized form factor for easy integration into circuit designs.

No. of Terminals: 3

Three terminals allow for flexible connectivity options and versatile usage in circuits.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures consistent and stable amplification performance in various applications.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can handle relatively high voltages in circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and temperature stability for long-term use.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 A of collector current, making it suitable for low to medium power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish ensures good conductivity and solderability for reliable connections in circuit assembly.

Terminal Position: DUAL

Dual terminal position allows for easy and secure mounting on PCBs, ensuring stable electrical connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive standard ensures high reliability and quality for automotive and industrial applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTC123JET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTC123JET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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