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NSVDTA143EM3T5G

Onsemi

NSVDTA143EM3T5G by Onsemi

NSVDTA143EM3T5G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 15, and IC of 0.1A. Ideal for switching applications, it has a max operating temperature of 150°C and collector-emitter voltage of 50V. This small outline package with built-in resistor is surface mountable and AEC-Q101 compliant.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.031

10k+ parts

$0.028

72,000

-

$0.037

$0.031

$0.028

DigiKey

USA . 72,000 parts In-Stock

1+ parts

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72,000

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Flip Electronics (Authorized)

USA . 72,000 parts In-Stock

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72,000

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Verical

USA . 56,000 parts In-Stock

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$0.039

56,000

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$0.039

Distributors (In-Stock)

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Digiode

USA . 1,023 parts In-Stock

1+ parts

$0.036

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1,023

$0.036

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Vyrian

USA . 412 parts In-Stock

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$0.038

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412

$0.038

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Flip Electronics

USA . 72,000 parts In-Stock

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72,000

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Chip Stock

USA . 38,000 parts In-Stock

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38,000

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J2 Sourcing AB

Sweden . 150 parts In-Stock

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150

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Distributors (Availability)

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Corphita

USA . 914 parts In-Stock

1+ parts

$0.034

100+ parts

-

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914

$0.034

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Corohmni

South Africa . 340 parts In-Stock

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$0.038

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340

$0.038

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Continental Prestige Electronics

USA . 80,000 parts In-Stock

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$0.071

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80,000

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$0.071

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Kepictronics

USA . 70,000 parts In-Stock

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70,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,253 parts In-Stock

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SupplyDigital Components

Austria . 5,696 parts In-Stock

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Problanco Electronics

Mexico . 1,829 parts In-Stock

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Kulean Microsystems

USA . 1,047 parts In-Stock

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1,047

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UHIMA Technologies

Türkiye . 787 parts In-Stock

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787

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Overview

Upgrade your electronic devices with the NSVDTA143EM3T5G by Onsemi, a high-quality PNP transistor that offers unmatched reliability and performance. With its single configuration and built-in resistor, this small signal BJT is perfect for switching applications in various industries. Enjoy the benefits of a low VCEsat of 0.25V, maximum power dissipation of 0.6W, and a wide operating temperature range from -55°C to 150°C. Trust in Onsemi's reputation for excellence and innovation, and experience the value and advantages this transistor brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal stability and durability for reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications where high speed switching is required.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation.

Surface Mount: YES

Can be easily mounted on the surface of the PCB, making it suitable for automated assembly processes.

Maximum VCEsat: 0.25 V

Low VCEsat ensures minimal power loss and high efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape is convenient for placement on the PCB and allows for efficient use of space.

Terminal Form: FLAT

Flat terminals provide a secure connection and ease of soldering.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuitry.

Maximum Power Dissipation (Abs): 0.6 W

Capable of handling moderate power dissipation, suitable for a variety of applications.

Package Style (Meter): SMALL OUTLINE

Small outline package is space-saving and ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 15

Consistent DC current gain ensures stable and reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

Sufficient collector-emitter voltage rating for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in electronic circuits.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in cold environments.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many low-power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable and low-resistance connection.

Terminal Position: DUAL

Dual terminal position for versatile mounting options on PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for a short duration during manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature compatibility for lead-free soldering processes.

Reference Standard: AEC-Q101

Complies with automotive-grade standards for reliability and quality assurance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA143EM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVDTA143EM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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