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NSVDTC114YM3T5G

Onsemi

NSVDTC114YM3T5G by Onsemi

NSVDTC114YM3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max power dissipation of 0.6W, hFE of 80, and VCE of 50V. This small outline transistor features a matte tin finish and is AEC-Q101 compliant for automotive use.

Median Price

$0.037

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 380,000 parts In-Stock

1+ parts

$0.039

100+ parts

$0.020

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-

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380,000

$0.039

$0.020

-

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Mouser Electronics

USA . 19,528 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.056

10k+ parts

$0.041

19,528

$0.260

$0.098

$0.056

$0.041

DigiKey

USA . 8,466 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.063

10k+ parts

$0.056

8,466

$0.260

$0.098

$0.063

$0.056

Chip1Stop

Japan . 808,000 parts In-Stock

1+ parts

-

100+ parts

$0.037

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808,000

-

$0.037

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Verical

USA . 380,000 parts In-Stock

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$0.020

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380,000

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$0.020

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Flip Electronics (Authorized)

USA . 72,000 parts In-Stock

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72,000

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Master Electronics

USA . 16,000 parts In-Stock

1+ parts

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$0.037

16,000

-

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$0.037

Rochester

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.031

10k+ parts

$0.028

8,000

-

$0.037

$0.031

$0.028

Distributors (In-Stock)

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Digiode

USA . 341 parts In-Stock

1+ parts

$0.019

100+ parts

-

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341

$0.019

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Vyrian

USA . 1,546 parts In-Stock

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$0.020

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1,546

$0.020

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Chip Stock

USA . 41,000 parts In-Stock

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41,000

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Flip Electronics

USA . 32,000 parts In-Stock

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IBS Electronics

USA . 16,000 parts In-Stock

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$0.045

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$0.044

16,000

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$0.045

$0.044

NAC Semi

USA . 8,000 parts In-Stock

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$0.168

8,000

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$0.168

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,714 parts In-Stock

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$0.018

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1,714

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Corohmni

South Africa . 360 parts In-Stock

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$0.020

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360

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Kepictronics

USA . 64,000 parts In-Stock

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64,000

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GreenTree Electronics

Israel . 64,000 parts In-Stock

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Component Connect

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Glotronic Ltd.

UK . 19,200 parts In-Stock

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Kulean Microsystems

USA . 8,069 parts In-Stock

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8,069

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Problanco Electronics

Mexico . 5,944 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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SupplyDigital Components

Austria . 1,304 parts In-Stock

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UHIMA Technologies

Türkiye . 685 parts In-Stock

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TANS Electronics

Latvia . 491 parts In-Stock

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Overview

Experience the power of innovation with the NSVDTC114YM3T5G by Onsemi. Crafted with precision and expertise, this small signal bipolar junction transistor offers unmatched quality and reliability for your switching applications. With a built-in resistor and NPN configuration, this transistor provides ease of use and optimal performance. Trust in Onsemi's reputation for excellence and choose the NSVDTC114YM3T5G for all your electronic needs. Elevate your projects with this versatile component and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic epoxy package provides good protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB, making this transistor convenient for applications requiring a resistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance in switching circuits.

Surface Mount: YES

Surface mount packaging allows for easy and efficient mounting on PCBs, enabling high-density circuit designs and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and easy to handle during assembly, providing compatibility with standard PCB layouts.

Terminal Form: FLAT

Flat terminal form ensures secure connections and soldering during assembly, contributing to the overall reliability of the circuit.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, this transistor can handle moderate power levels, suitable for many common applications.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain of 80 ensures stable and consistent amplification in the circuit, providing reliable performance.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating of 50V allows for operation in applications with higher voltage requirements, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability, ensuring consistent performance and long-term stability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, suitable for a wide range of applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and layout, accommodating various PCB layouts and assembly requirements.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive reliability standard ensures high quality and robustness, making this transistor suitable for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTC114YM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTC114YM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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