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NSVDTA143ZET1G

Onsemi

NSVDTA143ZET1G by Onsemi

NSVDTA143ZET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 80, max VCE of 50V, and max IC of 0.1A. This small outline package with gull wing terminals is ideal for surface mount designs in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,816 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

-

3,816

$0.200

$0.076

$0.048

-

Mouser Electronics

USA . 1,106 parts In-Stock

1+ parts

$0.230

100+ parts

$0.090

1k+ parts

$0.056

10k+ parts

$0.038

1,106

$0.230

$0.090

$0.056

$0.038

Newark

USA . 150,000 parts In-Stock

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150,000

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Arrow

USA . 27,000 parts In-Stock

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27,000

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Verical

USA . 27,000 parts In-Stock

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27,000

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Chip1Stop

Japan . 27,000 parts In-Stock

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$0.024

27,000

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-

$0.024

Distributors (In-Stock)

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Vyrian

USA . 1,659 parts In-Stock

1+ parts

$0.024

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1,659

$0.024

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Digiode

USA . 1,019 parts In-Stock

1+ parts

$0.142

100+ parts

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1,019

$0.142

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Chip Stock

USA . 32,000 parts In-Stock

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32,000

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Distributors (Availability)

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Corohmni

South Africa . 432 parts In-Stock

1+ parts

$0.024

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432

$0.024

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Corphita

USA . 463 parts In-Stock

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$0.135

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463

$0.135

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Component Stockers USA

USA . 35,806 parts In-Stock

1+ parts

$0.390

100+ parts

$0.110

1k+ parts

$0.080

10k+ parts

$0.030

35,806

$0.390

$0.110

$0.080

$0.030

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,418 parts In-Stock

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7,418

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RC Electronics

USA . 4,140 parts In-Stock

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$0.030

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4,140

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$0.030

$0.030

SupplyDigital Components

Austria . 3,177 parts In-Stock

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3,177

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Problanco Electronics

Mexico . 759 parts In-Stock

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UHIMA Technologies

Türkiye . 708 parts In-Stock

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708

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TANS Electronics

Latvia . 230 parts In-Stock

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230

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Overview

Enhance your electronic projects with the NSVDTA143ZET1G by Onsemi! Manufactured by a trusted leader in the industry, this small signal bipolar junction transistor offers reliable performance and high-quality construction. Ideal for switching applications, this PNP transistor features a built-in resistor for added convenience. With a maximum collector-emitter voltage of 50V and excellent DC current gain, this transistor provides excellent value and versatility for your circuit designs. Upgrade your projects today with the NSVDTA143ZET1G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and heat dissipation, making the transistor reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, making this transistor versatile for various circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching times and efficient performance in applications that require frequent on/off transitions.

Surface Mount: YES

Surface mount capability allows for easy and efficient automated assembly processes, reducing production costs and increasing reliability.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures easy placement and secure mounting on the PCB, enhancing the overall reliability of the circuit.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and excellent solder joint reliability, ensuring proper electrical connections in the circuit.

No. of Terminals: 3

Three terminals provide simple connectivity and allow for easy integration into the circuit design, making the transistor user-friendly for both hobbyists and professionals.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enables high-density mounting, making it suitable for compact electronic devices with limited board space.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and stable amplification of signals, making this transistor reliable for applications where signal amplification is crucial.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle a wide range of voltage levels, making it versatile for various voltage requirements in electronic circuits.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency, ensuring stable and consistent performance of the transistor over time.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows this transistor to handle moderate current levels, making it suitable for low to medium power applications like small signal switching.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and robustness of the transistor in various environmental conditions.

Terminal Position: DUAL

Dual terminal positions offer flexibility in mounting and connectivity options, enabling versatile usage in different circuit layouts and configurations.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this transistor suitable for automotive and other demanding applications where stringent quality standards are required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA143ZET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSVDTA143ZET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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