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NSVDTC144EM3T5G

Onsemi

NSVDTC144EM3T5G by Onsemi

NSVDTC144EM3T5G by Onsemi is a NPN BJT transistor with a max VCEsat of 0.25V, ideal for switching applications. It has a min hFE of 80 and can handle a max IC of 0.1A. With a package style of small outline, it operates b/w -55 to 150 °C and complies with AEC-Q101 standards.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,192 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.056

10k+ parts

$0.043

3,192

$0.260

$0.098

$0.056

$0.043

Rochester

USA . 95,888 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.031

10k+ parts

$0.028

95,888

-

$0.037

$0.031

$0.028

Flip Electronics (Authorized)

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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56,000

-

-

-

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Verical

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

48,000

-

-

-

$0.039

DigiKey

USA . 2,001 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.042

2,001

-

-

-

$0.042

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,087 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

10k+ parts

-

2,087

$0.036

-

-

-

Vyrian

USA . 1,072 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

1,072

$0.038

-

-

-

Flip Electronics

USA . 104,000 parts In-Stock

1+ parts

-

100+ parts

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104,000

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-

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Chip Stock

USA . 57,000 parts In-Stock

1+ parts

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57,000

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,594 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

10k+ parts

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1,594

$0.034

-

-

-

Corohmni

South Africa . 440 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

440

$0.038

-

-

-

Component Stockers USA

USA . 81,740 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.030

10k+ parts

$0.030

81,740

$0.040

$0.040

$0.030

$0.030

Continental Prestige Electronics

USA . 55,888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.045

10k+ parts

-

55,888

-

-

$0.045

-

Problanco Electronics

Mexico . 5,389 parts In-Stock

1+ parts

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100+ parts

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5,389

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Kulean Microsystems

USA . 3,173 parts In-Stock

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3,173

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SupplyDigital Components

Austria . 2,885 parts In-Stock

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2,885

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TANS Electronics

Latvia . 2,540 parts In-Stock

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2,540

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UHIMA Technologies

Türkiye . 906 parts In-Stock

1+ parts

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906

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Overview

Unlock the power of innovation with the NSVDTC144EM3T5G by Onsemi. This small signal bipolar junction transistor (BJT) offers unmatched quality and reliability, thanks to Onsemi's stellar reputation as a leading manufacturer in the industry. Ideal for switching applications, this NPN transistor comes in a compact package with built-in resistors, making it perfect for a wide range of electronic projects. With a low VCEsat of 0.25 V and high DC current gain of 80, this transistor delivers exceptional performance while operating at temperatures ranging from -55 °C to 150°C. Experience the value and benefits of this versatile component, designed to exceed your expectations and elevate your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by integrating a resistor, saving space and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Allows for easy and convenient PCB mounting, ideal for automated assembly processes.

Maximum VCEsat: 0.25 V

Low saturation voltage minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation on the PCB, aiding in proper assembly.

Terminal Form: FLAT

Provides a stable and secure connection with the PCB, ensuring reliable performance.

No. of Terminals: 3

Simplified connection requirements with a minimal number of terminals, making installation straightforward.

Maximum Power Dissipation (Abs): 0.6 W

Handles moderate power levels, suitable for a variety of applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact package size saves PCB real estate, beneficial for designs with space constraints.

Minimum DC Current Gain (hFE): 80

High current gain ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Extended temperature range allows for operation in challenging environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Withstands higher voltages, providing versatility for various circuit requirements.

Transistor Element Material: SILICON

Silicon offers superior performance characteristics compared to other materials, ensuring reliability and efficiency.

Minimum Operating Temperature: -55 °C

Wide temperature range enables operation in extreme cold conditions, making it suitable for diverse applications.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for low to medium power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and enhances solderability for a secure connection.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Fast reflow time ensures efficient and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and mechanical stability.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTC144EM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILIT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVDTC144EM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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