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NSVDTA113EM3T5G

Onsemi

NSVDTA113EM3T5G by Onsemi

NSVDTA113EM3T5G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 3, and IC of 0.1A. Ideal for switching applications, it has a max operating temperature of 150°C and can handle up to 50V. The package style is small outline with matte tin finish, suitable for surface mount configurations.

Median Price

$0.041

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 52,000 parts In-Stock

1+ parts

$0.043

100+ parts

-

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52,000

$0.043

-

-

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DigiKey

USA . 6,092 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.074

10k+ parts

$0.066

6,092

$0.300

$0.114

$0.074

$0.066

Mouser Electronics

USA . 2,059 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.066

10k+ parts

$0.038

2,059

$0.300

$0.114

$0.066

$0.038

Chip1Stop

Japan . 144,000 parts In-Stock

1+ parts

-

100+ parts

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$0.036

144,000

-

-

-

$0.036

Future Electronics

Canada . 104,000 parts In-Stock

1+ parts

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$0.041

104,000

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$0.041

Newark

USA . 54,000 parts In-Stock

1+ parts

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$0.041

54,000

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$0.041

Verical

USA . 52,000 parts In-Stock

1+ parts

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100+ parts

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$0.032

10k+ parts

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52,000

-

-

$0.032

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Rochester

USA . 1,370 parts In-Stock

1+ parts

-

100+ parts

$0.037

1k+ parts

$0.031

10k+ parts

$0.028

1,370

-

$0.037

$0.031

$0.028

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 685 parts In-Stock

1+ parts

$0.033

100+ parts

-

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685

$0.033

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-

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Digiode

USA . 736 parts In-Stock

1+ parts

$0.180

100+ parts

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736

$0.180

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Chip Stock

USA . 197,346 parts In-Stock

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197,346

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Flip Electronics

USA . 56,000 parts In-Stock

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56,000

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IBS Electronics

USA . 40,000 parts In-Stock

1+ parts

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$0.042

40,000

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$0.042

NAC Semi

USA . 32,000 parts In-Stock

1+ parts

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$0.060

32,000

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$0.060

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 296 parts In-Stock

1+ parts

$0.033

100+ parts

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296

$0.033

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Corphita

USA . 1,832 parts In-Stock

1+ parts

$0.171

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1,832

$0.171

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Kepictronics

USA . 104,000 parts In-Stock

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104,000

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Component Connect

USA . 62,000 parts In-Stock

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62,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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SupplyDigital Components

Austria . 5,885 parts In-Stock

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5,885

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Problanco Electronics

Mexico . 5,250 parts In-Stock

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5,250

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TANS Electronics

Latvia . 3,437 parts In-Stock

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3,437

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Kulean Microsystems

USA . 2,466 parts In-Stock

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2,466

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UHIMA Technologies

Türkiye . 363 parts In-Stock

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363

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Overview

Enhance your electronic designs with the NSVDTA113EM3T5G by Onsemi, a high-quality PNP Small Signal Bipolar Junction Transistor with a built-in resistor for efficient switching applications. Manufactured by Onsemi, this product guarantees reliability and performance. With a low VCEsat of 0.25V and a maximum collector current of 0.1A, this transistor offers exceptional value and benefits to customers seeking reliable and efficient solutions for their electronics projects. Upgrade your designs today with the NSVDTA113EM3T5G and experience unparalleled quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by incorporating a resistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Facilitates efficient PCB assembly and space-saving design.

Maximum VCEsat: 0.25 V

Low VCEsat improves energy efficiency and minimizes power loss in switching operations.

Package Shape: RECTANGULAR

Sleek rectangular shape allows for compact placement on the circuit board.

Terminal Form: FLAT

Flat terminals provide easy and secure soldering connections.

No. of Terminals: 3

Provides necessary connections for the transistor's operation with simplicity.

Maximum Power Dissipation: 0.6 W

Can handle decent power levels without overheating, ensuring stable performance under various conditions.

Package Style (Meter): SMALL OUTLINE

Compact small outline package saves space on the PCB and allows for dense circuit designs.

Minimum DC Current Gain (hFE): 3

Sufficient minimum DC current gain ensures reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in a wide range of environments without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high collector-emitter voltage levels, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics, ensuring stable operation of the transistor.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for reliable performance even in extreme cold conditions.

Maximum Collector Current (IC): 0.1 A

Can handle decent collector current, making it suitable for various switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable connection and solder joint for durability.

Terminal Position: DUAL

Dual terminal position allows for easy and secure mounting on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for a specified period, ensuring reliability during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for lead-free soldering processes.

Reference Standard: AEC-Q101

Compliant with automotive industry standards for quality and reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVDTA113EM3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVDTA113EM3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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