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NSBA143EDP6T5G

Onsemi

NSBA143EDP6T5G by Onsemi

NSBA143EDP6T5G by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max collector-emitter voltage of 50V and max current of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,431 parts In-Stock

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Digiode

USA . 2,387 parts In-Stock

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AZTECH Wire

Italy . 1,091 parts In-Stock

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$16.270

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QUARKTWIN TECHNOLOGY LTD

USA . 16,501 parts In-Stock

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Problanco Electronics

Mexico . 7,337 parts In-Stock

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SupplyDigital Components

Austria . 4,867 parts In-Stock

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Kulean Microsystems

USA . 962 parts In-Stock

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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TANS Electronics

Latvia . 655 parts In-Stock

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Corphita

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Corohmni

South Africa . 170 parts In-Stock

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Overview

Enhance your electronic projects with the NSBA143EDP6T5G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers superior performance and reliability. Manufactured by Onsemi, a trusted industry leader, this PNP transistor with built-in resistor is perfect for switching applications. With its compact rectangular package and flat terminal form, this transistor is easy to integrate into your designs. Experience seamless operation with a maximum collector-emitter voltage of 50V and a maximum collector current of 0.1A. Trust Onsemi for cutting-edge technology and unparalleled value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power switching applications, offering efficiency and reliability.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration simplifies circuit design and saves space by having two separate elements with a built-in resistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly change between on and off states, making it ideal for digital circuits.

Surface Mount: YES

Surface mount installation allows for easy and efficient PCB assembly, saving time and reducing production costs.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering, contributing to the overall reliability of the transistor.

Maximum Power Dissipation (Abs): 0.408 W

With a high maximum power dissipation, this transistor can handle a significant amount of power without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage allows for the transistor to be used in a wide range of applications that require higher voltage handling capabilities.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads in various circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA143EDP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA143EDP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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