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NSBA113EDXV6T1G

Onsemi

NSBA113EDXV6T1G by Onsemi

NSBA113EDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 3, VCE of 50V, and IC of 0.1A. It comes in a small outline package suitable for surface mount applications. Ideal for low-power electronic circuits requiring high gain and voltage amplification.

Median Price

$0.067

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 24,000 parts In-Stock

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$0.067

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$0.067

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Chip Stock

USA . 21,000 parts In-Stock

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Vyrian

USA . 4,758 parts In-Stock

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Digiode

USA . 1,160 parts In-Stock

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AZTECH Wire

Italy . 1,123 parts In-Stock

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$10.590

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SupplyDigital Components

Austria . 8,258 parts In-Stock

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Problanco Electronics

Mexico . 4,858 parts In-Stock

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TANS Electronics

Latvia . 2,748 parts In-Stock

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Kulean Microsystems

USA . 2,608 parts In-Stock

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Corphita

USA . 1,402 parts In-Stock

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UHIMA Technologies

Türkiye . 784 parts In-Stock

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Corohmni

South Africa . 147 parts In-Stock

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Overview

Discover the innovative NSBA113EDXV6T1G by Onsemi, a top-tier manufacturer specializing in Small Signal Bipolar Junction Transistors (BJT). This PNP transistor with separate configuration and built-in resistor offers exceptional performance in various applications. From amplifiers to voltage regulators, this product ensures reliable operation and efficient power dissipation up to 0.5W. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 3, customers can trust in the quality and value that Onsemi delivers. Experience superior functionality and durability with the NSBA113EDXV6T1G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good thermal resistance and durability, making the product suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having built-in resistors allows for easier circuit design and saves space on the PCB.

Surface Mount: YES

Surface mount packaging simplifies PCB assembly and enables high-density placements.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 W, this transistor can handle moderate power levels efficiently.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in saving PCB space and allows for compact designs.

Minimum DC Current Gain (hFE): 3

A minimum DC current gain of 3 ensures reliable amplification performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

The 50V maximum collector-emitter voltage rating offers flexibility in voltage levels for different applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate currents for various loads.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA113EDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSBA113EDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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