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NSBA113EDXV6T5

Onsemi

NSBA113EDXV6T5 by Onsemi

NSBA113EDXV6T5 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style and can handle up to 0.1A collector current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,118 parts In-Stock

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Digiode

USA . 1,664 parts In-Stock

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TANS Electronics

Latvia . 6,613 parts In-Stock

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SupplyDigital Components

Austria . 3,821 parts In-Stock

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Problanco Electronics

Mexico . 2,818 parts In-Stock

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Kulean Microsystems

USA . 2,653 parts In-Stock

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Corphita

USA . 832 parts In-Stock

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UHIMA Technologies

Türkiye . 584 parts In-Stock

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Corohmni

South Africa . 445 parts In-Stock

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Overview

Enhance your electronic projects with the NSBA113EDXV6T5 by Onsemi! Manufactured by a trusted industry leader, this small signal bipolar junction transistor offers unparalleled quality and reliability. Ideal for switching applications, this PNP transistor boasts a compact design with built-in resistors, making it easy to integrate into your circuits. With a maximum power dissipation of 0.5W and a collector-emitter voltage of 50V, this transistor delivers exceptional performance. Upgrade your designs today with the NSBA113EDXV6T5 and experience the benefits of superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications in electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off states.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving assembly time and providing mechanical stability.

Maximum Power Dissipation (Abs): 0.5 W

Can handle power dissipation of up to 0.5W, making it suitable for low to medium power applications.

Minimum DC Current Gain (hFE): 3

A minimum DC current gain of 3 ensures stable and predictable amplification in circuit designs.

Maximum Collector-Emitter Voltage: 50 V

Can withstand up to 50V across the collector-emitter junction, providing a wide operating voltage range.

Maximum Collector Current (IC): 0.1 A

Capable of handling collector currents up to 0.1A, suitable for low current switching applications.

Package Style (Meter): SMALL OUTLINE

Compact size makes it ideal for space-constrained PCB designs or applications where size matters.

Terminal Finish: TIN

Tin terminal finish provides good solderability and helps prevent oxidation for reliable electrical connections.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures of up to 260 °C, ensuring reliable solder joints during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA113EDXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA113EDXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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