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NSBA114EDP6T5G

Onsemi

NSBA114EDP6T5G by Onsemi

NSBA114EDP6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 35. Ideal for switching applications, it has a max collector-emitter voltage of 50V and can handle up to 0.1A collector current. The transistor operates at a max temp of 150°C in a small outline package suitable for surface mount assembly.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,479 parts In-Stock

1+ parts

$0.560

100+ parts

$0.363

1k+ parts

$0.200

10k+ parts

$0.065

6,479

$0.560

$0.363

$0.200

$0.065

Chip1Stop

Japan . 15,980 parts In-Stock

1+ parts

$1.210

100+ parts

$0.336

1k+ parts

$0.189

10k+ parts

-

15,980

$1.210

$0.336

$0.189

-

Rochester

USA . 158,500 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.059

10k+ parts

$0.053

158,500

-

$0.071

$0.059

$0.053

DigiKey

USA . 158,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.090

158,500

-

-

-

$0.090

Flip Electronics (Authorized)

USA . 144,000 parts In-Stock

1+ parts

-

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144,000

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Verical

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.066

96,000

-

-

-

$0.066

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,050 parts In-Stock

1+ parts

$0.084

100+ parts

-

1k+ parts

-

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2,050

$0.084

-

-

-

Vyrian

USA . 992 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

992

$0.088

-

-

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Flip Electronics

USA . 144,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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144,000

-

-

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Chip Stock

USA . 53,000 parts In-Stock

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53,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,728 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

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1,728

$0.079

-

-

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Corohmni

South Africa . 385 parts In-Stock

1+ parts

$0.088

100+ parts

-

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-

10k+ parts

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385

$0.088

-

-

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Component Stockers USA

USA . 111,363 parts In-Stock

1+ parts

$0.090

100+ parts

$0.080

1k+ parts

$0.080

10k+ parts

$0.080

111,363

$0.090

$0.080

$0.080

$0.080

Continental Prestige Electronics

USA . 160,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.099

10k+ parts

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160,000

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-

$0.099

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Perfect Parts

USA . 91,190 parts In-Stock

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91,190

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Kepictronics

USA . 16,000 parts In-Stock

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16,000

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Authorized Procurement Solutions

USA . 15,990 parts In-Stock

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15,990

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GreenTree Electronics

Israel . 15,980 parts In-Stock

1+ parts

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15,980

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Problanco Electronics

Mexico . 3,534 parts In-Stock

1+ parts

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3,534

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SupplyDigital Components

Austria . 2,115 parts In-Stock

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2,115

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Lixinc

USA . 2,060 parts In-Stock

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2,060

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TANS Electronics

Latvia . 1,731 parts In-Stock

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1,731

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Kulean Microsystems

USA . 36 parts In-Stock

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36

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UHIMA Technologies

Türkiye . 23 parts In-Stock

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23

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Overview

Unlock the power of efficient switching with the NSBA114EDP6T5G by Onsemi. Crafted with precision and quality, this PNP Small Signal Bipolar Junction Transistor is designed for seamless performance in a variety of applications. Whether you need reliable control in your electronics or precise switching capabilities, this transistor with built-in resistor has got you covered. Trust Onsemi's expertise and innovation to deliver value and reliability, ensuring that your projects run smoothly and efficiently. Elevate your designs with the NSBA114EDP6T5G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for various switching purposes.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having 2 separate elements with built-in resistors increases efficiency and simplifies circuit design, making it a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures optimal performance in this crucial function.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and making assembly more efficient.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and easy to handle, making it a practical choice for various electronic devices.

No. of Elements: 2

Having 2 elements increases versatility and allows for more complex circuit designs, making this transistor suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 0.408 W

With a maximum power dissipation of 0.408 W, this transistor can handle moderate power levels, making it suitable for many switching applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is lightweight, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures consistent and reliable performance in amplification and control circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring stable performance in various environments.

Maximum Collector-Emitter Voltage: 50 V

A maximum collector-emitter voltage of 50 V allows for safe operation in higher voltage applications, increasing the versatility of this transistor.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring high performance and durability in this transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for various switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and reliability, ensuring secure connections in electronic circuits.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit design and installation, making this transistor easy to integrate into various electronic devices.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand high temperatures during assembly processes, ensuring reliable soldering.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260°C ensures effective soldering during assembly, guaranteeing strong and stable connections in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA114EDP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA114EDP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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