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NSBA113EF3T5G

Onsemi

NSBA113EF3T5G by Onsemi

NSBA113EF3T5G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 3. The transistor is surface mountable in a small outline package ideal for automotive electronics meeting AEC-Q101 standard.

Median Price

$0.047

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 320,000 parts In-Stock

1+ parts

-

100+ parts

$0.048

1k+ parts

$0.040

10k+ parts

$0.035

320,000

-

$0.048

$0.040

$0.035

DigiKey

USA . 320,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.060

320,000

-

-

-

$0.060

Verical

USA . 320,000 parts In-Stock

1+ parts

-

100+ parts

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$0.044

320,000

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-

-

$0.044

Flip Electronics (Authorized)

USA . 304,000 parts In-Stock

1+ parts

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304,000

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Mouser Electronics

USA . 7,999 parts In-Stock

1+ parts

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$0.046

7,999

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-

$0.046

Distributors (In-Stock)

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Digiode

USA . 1,265 parts In-Stock

1+ parts

$0.037

100+ parts

-

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1,265

$0.037

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-

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Vyrian

USA . 78 parts In-Stock

1+ parts

$0.039

100+ parts

-

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78

$0.039

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Flip Electronics

USA . 304,000 parts In-Stock

1+ parts

-

100+ parts

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304,000

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-

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Chip Stock

USA . 75,000 parts In-Stock

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75,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,484 parts In-Stock

1+ parts

$0.035

100+ parts

-

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1,484

$0.035

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Corohmni

South Africa . 232 parts In-Stock

1+ parts

$0.039

100+ parts

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232

$0.039

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Microchip USA

USA . 1,680 parts In-Stock

1+ parts

$0.195

100+ parts

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1,680

$0.195

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Continental Prestige Electronics

USA . 320,000 parts In-Stock

1+ parts

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100+ parts

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$0.047

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320,000

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$0.047

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Kulean Microsystems

USA . 8,302 parts In-Stock

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8,302

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Problanco Electronics

Mexico . 7,078 parts In-Stock

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7,078

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SupplyDigital Components

Austria . 6,838 parts In-Stock

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6,838

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 2,674 parts In-Stock

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2,674

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UHIMA Technologies

Türkiye . 27 parts In-Stock

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27

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Overview

Enhance your electronic projects with the NSBA113EF3T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor boasts a single configuration with a built-in resistor, perfect for switching applications. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.1A, this transistor provides reliable performance in a compact rectangular package. Say goodbye to overheating issues with a maximum power dissipation of 0.297W. Explore endless possibilities with this versatile component that offers exceptional value and efficiency for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring longevity and ease of handling.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits, making this product suitable for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for efficient switching applications, providing quick response times.

Surface Mount: YES

Suitable for surface mount technology, simplifying the manufacturing process and saving space on the PCB.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on the PCB.

Maximum Power Dissipation (Abs): 0.297 W

High power dissipation capability ensures the transistor can handle a range of operating conditions without overheating.

Minimum DC Current Gain (hFE): 3

A minimum DC current gain of 3 ensures proper amplification of the input signal.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage of 50V, this transistor can be used in a variety of voltage applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, suitable for low to medium power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good electrical conductivity and corrosion resistance, ensuring reliable connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA113EF3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA113EF3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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