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NSBA114EDXV6T5G

Onsemi

NSBA114EDXV6T5G by Onsemi

NSBA114EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for small outline applications requiring a transistor with max. power dissipation of 0.5W and min. DC current gain of 35 (hFE). Suitable for surface mount designs needing a compact rectangular package shape.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

48,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.070

48,000

-

-

-

$0.070

Verical

USA . 48,000 parts In-Stock

1+ parts

-

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-

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$0.049

48,000

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-

-

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,779 parts In-Stock

1+ parts

$0.041

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1,779

$0.041

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Chip Stock

USA . 55,000 parts In-Stock

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55,000

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Vyrian

USA . 4,037 parts In-Stock

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4,037

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Distributors (Availability)

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Corphita

USA . 341 parts In-Stock

1+ parts

$0.039

100+ parts

-

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341

$0.039

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Corohmni

South Africa . 122 parts In-Stock

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$0.043

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122

$0.043

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AZTECH Wire

Italy . 1,042 parts In-Stock

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$19.520

100+ parts

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1,042

$19.520

-

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Continental Prestige Electronics

USA . 48,000 parts In-Stock

1+ parts

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$0.039

48,000

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$0.039

QUARKTWIN TECHNOLOGY LTD

USA . 19,729 parts In-Stock

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19,729

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TANS Electronics

Latvia . 6,944 parts In-Stock

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6,944

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Problanco Electronics

Mexico . 5,967 parts In-Stock

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5,967

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Kulean Microsystems

USA . 3,774 parts In-Stock

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3,774

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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SupplyDigital Components

Austria . 1,228 parts In-Stock

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1,228

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UHIMA Technologies

Türkiye . 627 parts In-Stock

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627

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Overview

Enhance your electronic projects with the NSBA114EDXV6T5G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor with PNP polarity. Manufactured by Onsemi, known for their reliable and innovative components, this transistor offers a separate configuration with 2 elements and built-in resistors. Perfect for surface mount applications, this high-performance transistor provides a maximum collector-emitter voltage of 50V and a minimum DC current gain of 35, ensuring efficiency and accuracy in your designs. Trust Onsemi's expertise and elevate your circuits with the NSBA114EDXV6T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in low power amplification and switching circuits, making this product versatile for different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves board space, offering convenience and efficiency.

Surface Mount: YES

Surface mount capability allows for easy integration into printed circuit boards, enhancing the manufacturing process.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation capacity, this transistor can handle moderate power levels effectively, ensuring reliable performance.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures consistent and reliable amplification in various applications, offering stability and predictability.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides flexibility in circuit design and operation, making this transistor suitable for a wide range of voltage requirements.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle small to moderate current levels, making it ideal for low power applications.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures the reliability of the solder joints during the assembly process, guaranteeing a robust mechanical connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA114EDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSBA114EDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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