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NSBA114TDXV6T5G

Onsemi

NSBA114TDXV6T5G by Onsemi

NSBA114TDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 160. It has a max VCE of 50V and IC of 0.1A. Ideal for small signal applications in electronics due to its compact size and high DC current gain.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.051

10k+ parts

$0.046

56,000

-

$0.062

$0.051

$0.046

Farnell

UK . 56,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.066

56,000

-

-

-

$0.066

Flip Electronics (Authorized)

USA . 48,000 parts In-Stock

1+ parts

-

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48,000

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Verical

USA . 48,000 parts In-Stock

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$0.058

48,000

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$0.058

Distributors (In-Stock)

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Digiode

USA . 313 parts In-Stock

1+ parts

$0.050

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-

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313

$0.050

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Vyrian

USA . 94 parts In-Stock

1+ parts

$0.053

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94

$0.053

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Flip Electronics

USA . 48,000 parts In-Stock

1+ parts

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48,000

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Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Distributors (Availability)

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Corphita

USA . 681 parts In-Stock

1+ parts

$0.048

100+ parts

-

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681

$0.048

-

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Component Stockers USA

USA . 57,697 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

57,697

$0.050

$0.050

$0.050

$0.050

Corohmni

South Africa . 138 parts In-Stock

1+ parts

$0.053

100+ parts

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138

$0.053

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Continental Prestige Electronics

USA . 56,000 parts In-Stock

1+ parts

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$0.052

10k+ parts

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56,000

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$0.052

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SupplyDigital Components

Austria . 8,127 parts In-Stock

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TANS Electronics

Latvia . 7,466 parts In-Stock

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7,466

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Kulean Microsystems

USA . 7,123 parts In-Stock

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Problanco Electronics

Mexico . 4,176 parts In-Stock

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4,176

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UHIMA Technologies

Türkiye . 487 parts In-Stock

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487

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Overview

Unleash the power of innovation with the NSBA114TDXV6T5G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that offers unmatched quality and performance. With its PNP polarity, separate configuration, and built-in resistor, this transistor is perfect for a wide range of applications. From amplifiers to switches, this compact and efficient component delivers reliable results every time. Trust Onsemi's reputation for excellence and discover the value and benefits of the NSBA114TDXV6T5G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for applications where weight and reliability are important factors.

Polarity or Channel Type: PNP

The PNP configuration makes this transistor suitable for various types of circuit designs and applications, offering flexibility in usage.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor in the transistor simplifies circuit design and saves space on the PCB, making it a convenient and efficient choice.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, reducing production time and costs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides stability and easy mounting on the PCB, ensuring a secure and reliable connection.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels, suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 160

The high minimum DC current gain ensures reliable and consistent performance in amplification applications, providing predictable results.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V allows for use in circuits that require higher voltage handling capabilities, expanding the range of applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A provides sufficient current carrying capacity for small signal applications, ensuring stable operation under varying load conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish facilitates soldering during assembly, ensuring a secure and reliable connection for improved performance and longevity.

Terminal Position: DUAL

The dual terminal position allows for easy and flexible PCB layout, enabling efficient circuit design and optimization of space.

Peak Reflow Temperature: 260°C

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring reliability and durability in manufacturing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA114TDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSBA114TDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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