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NSBA114EDXV6T1

Onsemi

NSBA114EDXV6T1 by Onsemi

NSBA114EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 35. Ideal for switching applications, it has a max VCE of 50V and IC of 0.1A. With a package style of small outline, it is surface mountable and has a power dissipation of 0.5W.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

24,000

-

$0.079

$0.066

$0.059

DigiKey

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

24,000

-

-

-

$0.100

Verical

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

20,000

-

-

-

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,044 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

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2,044

$0.062

-

-

-

Vyrian

USA . 399 parts In-Stock

1+ parts

$0.065

100+ parts

-

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-

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399

$0.065

-

-

-

Chip Stock

USA . 34,000 parts In-Stock

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34,000

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,110 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

1,110

$0.058

-

-

-

Corohmni

South Africa . 305 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

10k+ parts

-

305

$0.065

-

-

-

Continental Prestige Electronics

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.054

10k+ parts

-

24,000

-

-

$0.054

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,724 parts In-Stock

1+ parts

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11,724

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Kulean Microsystems

USA . 7,514 parts In-Stock

1+ parts

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7,514

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SupplyDigital Components

Austria . 7,474 parts In-Stock

1+ parts

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100+ parts

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7,474

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-

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Problanco Electronics

Mexico . 5,397 parts In-Stock

1+ parts

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5,397

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TANS Electronics

Latvia . 4,428 parts In-Stock

1+ parts

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4,428

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RC Electronics

USA . 3,420 parts In-Stock

1+ parts

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100+ parts

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3,420

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

-

-

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UHIMA Technologies

Türkiye . 613 parts In-Stock

1+ parts

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10k+ parts

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613

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-

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Overview

Unlock the power of reliable performance with the NSBA114EDXV6T1 by Onsemi. As a leader in the industry, Onsemi delivers quality small signal bipolar junction transistors that are perfect for switching applications. With a compact package body and built-in resistor, this PNP transistor offers seamless integration and enhanced functionality. Experience the value of superior design and efficiency with the NSBA114EDXV6T1 - the perfect choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuits, with built-in resistors reducing the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy and compact mounting on PCBs, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

Facilitates organized and efficient placement on the PCB, optimizing circuit layout.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, ensuring reliability and preventing overheating issues.

Minimum DC Current Gain (hFE): 35

Provides consistent and predictable amplification of current in the circuit, enhancing performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for circuits with lower voltage requirements, offering compatibility for various applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for a range of circuit configurations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA114EDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA114EDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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