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NSBA114TDXV6T5

Onsemi

NSBA114TDXV6T5 by Onsemi

NSBA114TDXV6T5 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 160. Ideal for switching applications, it has a max VCE of 50V and IC of 0.1A. This small outline transistor in plastic/epoxy package is surface mountable with 6 terminals.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,999 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

15,999

-

$0.053

$0.044

$0.039

DigiKey

USA . 15,999 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.070

15,999

-

-

-

$0.070

Farnell

UK . 15,999 parts In-Stock

1+ parts

-

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15,999

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Verical

USA . 15,999 parts In-Stock

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-

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$0.049

15,999

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$0.049

Distributors (In-Stock)

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Digiode

USA . 163 parts In-Stock

1+ parts

$0.041

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-

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163

$0.041

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Vyrian

USA . 1,966 parts In-Stock

1+ parts

$0.043

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1,966

$0.043

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Chip Stock

USA . 73,000 parts In-Stock

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73,000

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Distributors (Availability)

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Corphita

USA . 1,354 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,354

$0.039

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Corohmni

South Africa . 499 parts In-Stock

1+ parts

$0.043

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499

$0.043

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.739

100+ parts

$1.582

1k+ parts

$1.426

10k+ parts

-

2,000

$1.739

$1.582

$1.426

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Continental Prestige Electronics

USA . 15,999 parts In-Stock

1+ parts

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$0.039

15,999

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$0.039

Problanco Electronics

Mexico . 7,859 parts In-Stock

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7,859

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TANS Electronics

Latvia . 7,058 parts In-Stock

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7,058

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Kulean Microsystems

USA . 6,137 parts In-Stock

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6,137

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SupplyDigital Components

Austria . 994 parts In-Stock

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994

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UHIMA Technologies

Türkiye . 878 parts In-Stock

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878

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Overview

Enhance your electronic designs with the NSBA114TDXV6T5 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled quality and performance. With its PNP polarity and switching application, you can trust this transistor for seamless functionality in a variety of applications. The compact design, built-in resistor, and high DC current gain ensure efficiency and reliability. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the NSBA114TDXV6T5 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design by providing a convenient component for current limiting or biasing.

Transistor Application: SWITCHING

Designed for efficient switching operations, this transistor is suitable for applications requiring fast switching speeds.

Surface Mount: YES

Surface mount packaging allows for easy and compact assembly onto circuit boards, saving space and facilitating automated manufacturing processes.

Maximum Power Dissipation (Abs): 0.5 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 160

The high DC current gain ensures amplification of input signals, making this transistor suitable for signal amplification applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides robustness and reliability in circuit designs requiring higher voltage levels.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 A of collector current, this transistor is suitable for low to moderate current switching applications.

Terminal Finish: TIN

The tin terminal finish ensures good solderability and conductivity, facilitating reliable connections in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA114TDXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA114TDXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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