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NSBA114YDP6T5G

Onsemi

NSBA114YDP6T5G by Onsemi

NSBA114YDP6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications, it has a max voltage of 50V, max current of 0.1A, and operates up to 150 °C. This small outline transistor in plastic/epoxy package is surface mountable with dual terminals.

Median Price

$0.070

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,000 parts In-Stock

1+ parts

$0.070

100+ parts

-

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8,000

$0.070

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Chip1Stop

Japan . 8,000 parts In-Stock

1+ parts

$1.000

100+ parts

$0.196

1k+ parts

$0.113

10k+ parts

-

8,000

$1.000

$0.196

$0.113

-

Rochester

USA . 432,000 parts In-Stock

1+ parts

-

100+ parts

$0.060

1k+ parts

$0.050

10k+ parts

$0.044

432,000

-

$0.060

$0.050

$0.044

DigiKey

USA . 432,000 parts In-Stock

1+ parts

-

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$0.070

432,000

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$0.070

Verical

USA . 224,000 parts In-Stock

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$0.055

224,000

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$0.055

Flip Electronics (Authorized)

USA . 136,000 parts In-Stock

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136,000

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Distributors (In-Stock)

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Vyrian

USA . 1,643 parts In-Stock

1+ parts

$0.044

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1,643

$0.044

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Digiode

USA . 2,010 parts In-Stock

1+ parts

$0.047

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2,010

$0.047

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Flip Electronics

USA . 136,000 parts In-Stock

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136,000

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Chip Stock

USA . 17,000 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 472 parts In-Stock

1+ parts

$0.044

100+ parts

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472

$0.044

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Corphita

USA . 2,275 parts In-Stock

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$0.044

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2,275

$0.044

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Microchip USA

USA . 1,221 parts In-Stock

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$0.260

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1,221

$0.260

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Perfect Parts

USA . 54,656 parts In-Stock

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54,656

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QUARKTWIN TECHNOLOGY LTD

USA . 8,564 parts In-Stock

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8,564

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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GreenTree Electronics

Israel . 8,000 parts In-Stock

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8,000

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TANS Electronics

Latvia . 5,002 parts In-Stock

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Kulean Microsystems

USA . 4,131 parts In-Stock

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Problanco Electronics

Mexico . 4,048 parts In-Stock

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4,048

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SupplyDigital Components

Austria . 3,734 parts In-Stock

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3,734

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UHIMA Technologies

Türkiye . 236 parts In-Stock

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Overview

Enhance your electronic projects with the NSBA114YDP6T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. With built-in resistors and a compact rectangular package, this PNP transistor offers seamless integration and efficiency. Manufactured by Onsemi, known for their reliable and innovative components, this transistor guarantees superior performance and durability. Whether you're a hobbyist or a professional, the NSBA114YDP6T5G provides value and versatility, making it an essential tool for your circuit designs. Elevate your projects with Onsemi's cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring PNP transistors.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration makes it convenient for use in circuits where separate elements are needed, and the built-in resistor simplifies circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in switching circuits.

Surface Mount: YES

Suitable for surface mounting, making it easier to integrate into compact electronic devices.

Maximum Power Dissipation (Abs): 0.408 W

With a high maximum power dissipation, this transistor can handle heavy loads without overheating.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards, optimizing space usage.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit connections, allowing for versatile circuit design.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and reliable performance in amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without failing.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for use in circuits that require high voltage handling capability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads efficiently.

Terminal Finish: MATTE TIN

Matte tin finish provides a good surface for soldering, ensuring secure and reliable connections.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand peak reflow temperatures for up to 30 seconds ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can be assembled using lead-free soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA114YDP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA114YDP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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