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NSBA114EF3T5G

Onsemi

NSBA114EF3T5G by Onsemi

NSBA114EF3T5G by Onsemi is a PNP BJT with built-in resistor for switching applications. Features include hFE of 35, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,277 parts In-Stock

1+ parts

$0.490

100+ parts

$0.230

1k+ parts

$0.121

10k+ parts

$0.090

7,277

$0.490

$0.230

$0.121

$0.090

DigiKey

USA . 304,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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304,000

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Flip Electronics (Authorized)

USA . 304,000 parts In-Stock

1+ parts

-

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304,000

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Rochester

USA . 221,500 parts In-Stock

1+ parts

-

100+ parts

$0.100

1k+ parts

$0.083

10k+ parts

$0.074

221,500

-

$0.100

$0.083

$0.074

Verical

USA . 125,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

125,500

-

-

-

$0.092

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,412 parts In-Stock

1+ parts

$0.072

100+ parts

-

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-

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2,412

$0.072

-

-

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Digiode

USA . 231 parts In-Stock

1+ parts

$0.079

100+ parts

-

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231

$0.079

-

-

-

Flip Electronics

USA . 304,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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304,000

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Chip Stock

USA . 69,000 parts In-Stock

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69,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 337 parts In-Stock

1+ parts

$0.072

100+ parts

-

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337

$0.072

-

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Corphita

USA . 2,307 parts In-Stock

1+ parts

$0.075

100+ parts

-

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10k+ parts

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2,307

$0.075

-

-

-

Component Stockers USA

USA . 240,950 parts In-Stock

1+ parts

$0.090

100+ parts

$0.080

1k+ parts

$0.070

10k+ parts

$0.070

240,950

$0.090

$0.080

$0.070

$0.070

Continental Prestige Electronics

USA . 221,500 parts In-Stock

1+ parts

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$0.100

10k+ parts

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221,500

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$0.100

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Perfect Parts

USA . 22,774 parts In-Stock

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22,774

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SupplyDigital Components

Austria . 6,530 parts In-Stock

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6,530

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Problanco Electronics

Mexico . 1,877 parts In-Stock

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1,877

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Kulean Microsystems

USA . 1,576 parts In-Stock

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1,576

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TANS Electronics

Latvia . 1,421 parts In-Stock

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1,421

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UHIMA Technologies

Türkiye . 731 parts In-Stock

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731

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Overview

Enhance your electronic projects with the NSBA114EF3T5G by Onsemi, a high-quality Small Signal BJT transistor. Manufactured by Onsemi, this PNP transistor offers reliable performance in switching applications. With a built-in resistor and a maximum collector-emitter voltage of 50V, this transistor is perfect for various projects requiring precise control and efficiency. Trust Onsemi's reputation for excellence and elevate your designs with the NSBA114EF3T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for various circuit designs and applications that require PNP transistors.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Saves space and simplifies circuit design by integrating a resistor within the transistor.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response times and reliable performance.

Surface Mount: YES

Easy to mount on a circuit board, making it convenient for automated assembly processes.

Package Shape: RECTANGULAR

Fits well within narrow spaces on a PCB, enabling compact and efficient layouts.

Terminal Form: FLAT

Facilitates soldering and ensures a secure connection with other components on the board.

No. of Terminals: 3

Simplifies the connection process and reduces the chances of wiring errors.

Maximum Power Dissipation (Abs): 0.297 W

Can handle relatively high power levels without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Space-saving design that is suitable for compact electronic devices and applications.

Minimum DC Current Gain (hFE): 35

Provides consistent amplification of the input signal, ensuring stable performance in various circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, increasing its versatility for different applications.

Maximum Collector-Emitter Voltage: 50 V

Allows for safe operation within a specified voltage range, protecting the transistor from damage.

Transistor Element Material: SILICON

Offers reliable and consistent performance, making it a popular choice for various electronic applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for a wide range of switching and amplification tasks.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a durable and reliable contact surface for soldering, ensuring a secure electrical connection.

Terminal Position: DUAL

Facilitates easy and secure mounting on a PCB, ensuring a stable connection during operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA114EF3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA114EF3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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