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NSBC123JPDXV6T1

Onsemi

NSBC123JPDXV6T1 by Onsemi

NSBC123JPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors in a small outline package, supporting a max collector-emitter voltage of 50V and max collector current of 0.1A. Suitable for surface mount designs requiring high DC current gain (hFE) above 80.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 38,000 parts In-Stock

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Vyrian

USA . 7,636 parts In-Stock

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Digiode

USA . 741 parts In-Stock

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AZTECH Wire

Italy . 1,212 parts In-Stock

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$14.940

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Perfect Parts

USA . 40,884 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,010 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,014 parts In-Stock

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Problanco Electronics

Mexico . 5,869 parts In-Stock

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SupplyDigital Components

Austria . 5,600 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,448 parts In-Stock

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TANS Electronics

Latvia . 1,918 parts In-Stock

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Corphita

USA . 1,344 parts In-Stock

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Corohmni

South Africa . 372 parts In-Stock

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UHIMA Technologies

Türkiye . 214 parts In-Stock

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Overview

Unleash the power of innovation with the NSBC123JPDXV6T1 by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJTs) that are perfect for switching applications. With NPN and PNP polarity options, these transistors come in a sleek rectangular package with built-in resistors for added convenience. Experience superior performance and reliability with this product, offering a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the NSBC123JPDXV6T1!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN AND PNP

Suitable for a wide range of circuit designs, allowing for versatile applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers flexibility in circuit design with built-in resistors, simplifying the overall setup.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Easy to mount on the surface of a PCB, saving space and making assembly more convenient.

Package Shape: RECTANGULAR

Compact shape that fits well within circuit layouts, optimizing space usage.

Maximum Power Dissipation (Abs): 0.5 W

Can handle a maximum power dissipation of 0.5W, making it suitable for various low to moderate power applications.

Minimum DC Current Gain (hFE): 80

With a minimum DC current gain of 80, ensures consistent amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Can withstand a maximum collector-emitter voltage of 50V, suitable for many common voltage requirements.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics, making the transistor reliable and efficient.

Maximum Collector Current (IC): 0.1 A

Supports a maximum collector current of 0.1A, suitable for low to moderate current applications.

Terminal Finish: TIN

Tin finish ensures good conductivity and solderability, making installation easier and more reliable.

Peak Reflow Temperature °C: 260

Withstands a peak reflow temperature of 260 °C during soldering, ensuring durability and longevity of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC123JPDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC123JPDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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