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NSBC114TDXV6T1

Onsemi

NSBC114TDXV6T1 by Onsemi

NSBC114TDXV6T1 by Onsemi is a NPN BJT transistor with 2 elements, built-in resistor, and hFE of 160. It has a max collector-emitter voltage of 50V and max current of 0.1A. Ideal for switching applications due to its small outline package and peak reflow temp of 260 °C.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 228,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

228,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 228,000 parts In-Stock

1+ parts

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$0.070

228,000

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$0.070

Farnell

UK . 228,000 parts In-Stock

1+ parts

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228,000

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Verical

USA . 104,000 parts In-Stock

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$0.049

104,000

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-

$0.049

Distributors (In-Stock)

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Digiode

USA . 264 parts In-Stock

1+ parts

$0.041

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264

$0.041

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DigiKey Marketplace

USA . 228,000 parts In-Stock

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228,000

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Chip Stock

USA . 56,000 parts In-Stock

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56,000

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Vyrian

USA . 13,342 parts In-Stock

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13,342

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Distributors (Availability)

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Corohmni

South Africa . 431 parts In-Stock

1+ parts

$0.037

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431

$0.037

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Corphita

USA . 1,130 parts In-Stock

1+ parts

$0.039

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1,130

$0.039

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AZTECH Wire

Italy . 356 parts In-Stock

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$10.050

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356

$10.050

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Continental Prestige Electronics

USA . 228,000 parts In-Stock

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$0.039

228,000

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$0.039

RC Electronics

USA . 52,000 parts In-Stock

1+ parts

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100+ parts

$0.130

1k+ parts

$0.120

10k+ parts

$0.120

52,000

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$0.130

$0.120

$0.120

A-Z Elektronik GmbH

Germany . 7,286 parts In-Stock

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7,286

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SupplyDigital Components

Austria . 5,464 parts In-Stock

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TANS Electronics

Latvia . 4,145 parts In-Stock

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Problanco Electronics

Mexico . 794 parts In-Stock

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794

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Kulean Microsystems

USA . 497 parts In-Stock

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497

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UHIMA Technologies

Türkiye . 446 parts In-Stock

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446

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Overview

Discover the NSBC114TDXV6T1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor ideal for switching applications. With its NPN polarity and built-in resistor, this transistor offers seamless performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this product guarantees exceptional value and benefits. Perfect for a variety of electronic projects, this transistor is designed to deliver superior functionality and efficiency. Upgrade your circuits with the NSBC114TDXV6T1 and experience unparalleled quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high current gain and fast switching speeds.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and saves space, making this transistor efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures high performance and reliability in switching circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, making this transistor suitable for mass production.

Package Shape: RECTANGULAR

This shape allows for easier integration into circuit designs and provides a compact form factor for space-constrained applications.

Terminal Form: FLAT

Flat terminals provide a secure connection and easy soldering during assembly, ensuring a reliable electrical connection.

No. of Elements: 2

Having 2 elements allows for more flexibility in circuit configurations and applications, offering enhanced performance and functionality.

No. of Terminals: 6

With 6 terminals, this transistor provides multiple connection points for integrating into complex circuit designs and ensuring stable operation.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation capability, this transistor can handle higher currents and voltages, ensuring reliable performance in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and allows for high-density mounting, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 160

The high minimum current gain ensures stable and consistent performance in amplification circuits, providing reliable signal amplification.

Maximum Collector-Emitter Voltage: 50 V

The high voltage rating allows for operation in various voltage environments, making this transistor versatile and suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good temperature stability, making them reliable for various electronic applications.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle higher currents without overheating, ensuring reliable operation in demanding conditions.

Terminal Finish: TIN

Tin terminals provide good conductivity and corrosion resistance, ensuring a stable electrical connection and long-term reliability.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and connection options, allowing for easier integration into different circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The quick peak reflow time ensures efficient and reliable soldering during assembly, reducing manufacturing time and ensuring high-quality solder joints.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without damage, ensuring reliable solder joints and long-term performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114TDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114TDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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